Recent advances in ultrathin two-dimensional nanomaterials
Since the discovery of mechanically exfoliated graphene in 2004, research on ultrathin two-
dimensional (2D) nanomaterials has grown exponentially in the fields of condensed matter …
dimensional (2D) nanomaterials has grown exponentially in the fields of condensed matter …
Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor
Atomically thin molybdenum disulfide (MoS2), a member of the transition metal
dichalcogenide (TMDC) family, has emerged as the prototypical two-dimensional (2D) …
dichalcogenide (TMDC) family, has emerged as the prototypical two-dimensional (2D) …
Fermi‐Level Pinning‐Free WSe2 Transistors via 2D Van der Waals Metal Contacts and Their Circuits
Precise control over the polarity of transistors is a key necessity for the construction of
complementary metal–oxide–semiconductor circuits. However, the polarity control of 2D …
complementary metal–oxide–semiconductor circuits. However, the polarity control of 2D …
Electrical characterization of 2D materials-based field-effect transistors
Abstract Two-dimensional (2D) materials hold great promise for future nanoelectronics as
conventional semiconductor technologies face serious limitations in performance and power …
conventional semiconductor technologies face serious limitations in performance and power …
Defect Dominated Charge Transport and Fermi Level Pinning in MoS2/Metal Contacts
Understanding the electronic contact between molybdenum disulfide (MoS2) and metal
electrodes is vital for the realization of future MoS2-based electronic devices. Natural MoS2 …
electrodes is vital for the realization of future MoS2-based electronic devices. Natural MoS2 …
Universal Fermi-level pinning in transition-metal dichalcogenides
K Sotthewes, R Van Bremen, E Dollekamp… - The Journal of …, 2019 - ACS Publications
Understanding the electron transport through transition-metal dichalcogenide (TMDC)-
based semiconductor/metal junctions is vital for the realization of future TMDC-based (opto-) …
based semiconductor/metal junctions is vital for the realization of future TMDC-based (opto-) …
Vertical 2D/3D semiconductor heterostructures based on epitaxial molybdenum disulfide and gallium nitride
When designing semiconductor heterostructures, it is expected that epitaxial alignment will
facilitate low-defect interfaces and efficient vertical transport. Here, we report lattice-matched …
facilitate low-defect interfaces and efficient vertical transport. Here, we report lattice-matched …
Improved Sensitivity in Schottky Contacted Two-Dimensional MoS2 Gas Sensor
Y Kim, SK Kang, NC Oh, HD Lee, SM Lee… - … applied materials & …, 2019 - ACS Publications
Two-dimensional (2D) transition-metal dichalcogenides have attracted significant attention
as gas-sensing materials owing to their superior responsivity at room temperature and their …
as gas-sensing materials owing to their superior responsivity at room temperature and their …
Interface characterization and control of 2D materials and heterostructures
Abstract 2D materials and heterostructures have attracted significant attention for a variety of
nanoelectronic and optoelectronic applications. At the atomically thin limit, the material …
nanoelectronic and optoelectronic applications. At the atomically thin limit, the material …
A dielectric-defined lateral heterojunction in a monolayer semiconductor
Owing to their low dimensionality, two-dimensional semiconductors, such as monolayer
molybdenum disulfide, have a range of properties that make them valuable in the …
molybdenum disulfide, have a range of properties that make them valuable in the …