High-Performance Ge nMOSFETs With Junctions Formed by “Spin-On Dopant”
M Jamil, J Mantey, EU Onyegam… - IEEE electron device …, 2011 - ieeexplore.ieee.org
We report high-mobility Ge nMOSFETs using a simple approach to form n+-p junctions by
rapid thermal diffusion of" spin-on dopant" to avoid implantation damage. These junctions …
rapid thermal diffusion of" spin-on dopant" to avoid implantation damage. These junctions …
Role of Confinement on Carrier Transport in Ge–SixGe1–x Core–Shell Nanowires
We examine the impact of shell content and the associated hole confinement on carrier
transport in Ge–Si x Ge1–x core–shell nanowires (NWs). Using NWs with different Si x Ge1 …
transport in Ge–Si x Ge1–x core–shell nanowires (NWs). Using NWs with different Si x Ge1 …
High-Mobility TaN//Ge(111) n-MOSFETs With RTO-Grown Passivation Layer
We report the fabrication of high-electron-mobility Ge (III) n-MOSFETs using a novel and
simple approach to passivate a Ge surface by rapid thermal oxidation (RTO). A thin …
simple approach to passivate a Ge surface by rapid thermal oxidation (RTO). A thin …
Germanium and epitaxial Ge: C devices for CMOS extension and beyond
M Jamil - 2011 - repositories.lib.utexas.edu
This work focuses on device design and process integration of high-performance Ge-based
devices for CMOS applications and beyond. Here we addressed several key challenges …
devices for CMOS applications and beyond. Here we addressed several key challenges …