Roadmap on ferroelectric hafnia-and zirconia-based materials and devices
Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development
over the last decade, pushing them to the forefront of ultralow-power electronic systems …
over the last decade, pushing them to the forefront of ultralow-power electronic systems …
A Perspective on ferroelectricity in hafnium oxide: Mechanisms and considerations regarding its stability and performance
Ferroelectric hafnium oxides are poised to impact a wide range of microelectronic
applications owing to their superior thickness scaling of ferroelectric stability and …
applications owing to their superior thickness scaling of ferroelectric stability and …
Retention Improvement of HZO-Based Ferroelectric Capacitors with TiO2 Insets
AA Koroleva, AG Chernikova, SS Zarubin… - ACS …, 2022 - ACS Publications
The influence of the bottom TiO2 interfacial layer grown by atomic layer deposition on the
ferroelectric properties of the TiN/Hf0. 5Zr0. 5O2/TiN capacitors is systematically …
ferroelectric properties of the TiN/Hf0. 5Zr0. 5O2/TiN capacitors is systematically …
Impact of Oxygen Vacancy on Ferroelectric Characteristics and Its Implication for Wake-Up and Fatigue of HfO2-Based Thin Films
In this article, a phase-field polarization switching model for ferroelectric HfO 2-based thin
films considering oxygen vacancies () has been developed based on the 2-D time …
films considering oxygen vacancies () has been developed based on the 2-D time …
Electronic Synapses Enabled by an Epitaxial SrTiO3‐δ / Hf0.5Zr0.5O2 Ferroelectric Field‐Effect Memristor Integrated on Silicon
N Siannas, C Zacharaki, P Tsipas… - Advanced Functional …, 2024 - Wiley Online Library
Synapses play a vital role in information processing, learning, and memory formation in the
brain. By emulating the behavior of biological synapses, electronic synaptic devices hold the …
brain. By emulating the behavior of biological synapses, electronic synaptic devices hold the …
Mitigation of field-driven dynamic phase evolution in ferroelectric Hf0. 5Zr0. 5O2 films by adopting oxygen-supplying electrode
Abstract Ferroelectricity in (Hf, Zr) O 2 films under 10 nm has been correlated with various
factors, including dopant, oxygen deficiency, strain, and surface energy. Owing to their …
factors, including dopant, oxygen deficiency, strain, and surface energy. Owing to their …
Evaluation of Imprint and Multi‐Level Dynamics in Ferroelectric Capacitors
Fluorite‐structured ferroelectrics are one of the most promising material systems for
emerging memory technologies. However, when integrated into electronic devices, these …
emerging memory technologies. However, when integrated into electronic devices, these …
[HTML][HTML] Oxygen vacancy contributions to the electrical stress response and endurance of ferroelectric hafnium zirconium oxide thin films
Despite its scalability and CMOS process compatibility, the limited endurance and sub-
optimal stress response of ferroelectric Zr-substituted hafnia [(Hf, Zr) O 2] have been one of …
optimal stress response of ferroelectric Zr-substituted hafnia [(Hf, Zr) O 2] have been one of …
Improved Polarization‐Retention‐Endurance in Hf0.5Zr0.5O2 Films by ZrO2 Capping via Electrostatic Effects
Ferroelectric hafnia is one of the most promising materials for next generation of non‐volatile
memory devices. Several strategies have demonstrated to be of interest to improve its …
memory devices. Several strategies have demonstrated to be of interest to improve its …
Oxygen Vacancies as Traps Responsible for La-Doped Hf0.5Zr0.5O2 Charge Transport
TV Perevalov, AA Gismatulin, IP Prosvirin… - The Journal of …, 2023 - ACS Publications
In the current study, a number of experimental methods combined with ab initio simulations
and charge transport simulations were used to prove that oxygen vacancies are responsible …
and charge transport simulations were used to prove that oxygen vacancies are responsible …