Droplet epitaxy of semiconductor nanostructures for quantum photonic devices
The long dreamed 'quantum internet'would consist of a network of quantum nodes (solid-
state or atomic systems) linked by flying qubits, naturally based on photons, travelling over …
state or atomic systems) linked by flying qubits, naturally based on photons, travelling over …
Ultra-small excitonic fine structure splitting in highly symmetric quantum dots on GaAs (001) substrate
We prepare symmetry-controlled GaAs/AlGaAs quantum dots (QDs) on (001) GaAs
substrates by infilling GaAs into AlGaAs nanoholes. For the most symmetric QDs, we …
substrates by infilling GaAs into AlGaAs nanoholes. For the most symmetric QDs, we …
Droplet epitaxy for advanced optoelectronic materials and devices
Droplet epitaxy was proposed to fabricate quantum dots in the early 1990s. Even though
many research efforts have been devoted to droplet epitaxy since then, it is only until …
many research efforts have been devoted to droplet epitaxy since then, it is only until …
Independent wavelength and density control of uniform GaAs/AlGaAs quantum dots grown by infilling self-assembled nanoholes
P Atkinson, E Zallo, OG Schmidt - Journal of applied Physics, 2012 - pubs.aip.org
Very low density growth of GaAs quantum dots in self-assembled nanoholes created by
gallium droplet etching is demonstrated. The emission energy of the quantum dots can be …
gallium droplet etching is demonstrated. The emission energy of the quantum dots can be …
Enhancing the optical excitation efficiency of a single self-assembled quantum dot with a plasmonic nanoantenna
M Pfeiffer, K Lindfors, C Wolpert, P Atkinson… - Nano …, 2010 - ACS Publications
We demonstrate how the controlled positioning of a plasmonic nanoparticle modifies the
photoluminescence of a single epitaxial GaAs quantum dot. The antenna particle leads to an …
photoluminescence of a single epitaxial GaAs quantum dot. The antenna particle leads to an …
Strain-induced tuning of the emission wavelength of high quality GaAs/AlGaAs quantum dots in the spectral range of the 87Rb D2 lines
Reversible biaxial strains are used for tuning the emission wavelengths of high quality
GaAs/AlGaAs quantum dots (QDs) in the spectral range of the 87 Rb D 2 lines. The strain is …
GaAs/AlGaAs quantum dots (QDs) in the spectral range of the 87 Rb D 2 lines. The strain is …
Dynamics of mass transport during nanohole drilling by local droplet etching
C Heyn, T Bartsch, S Sanguinetti, D Jesson… - Nanoscale research …, 2015 - Springer
Local droplet etching (LDE) utilizes metal droplets during molecular beam epitaxy for the self-
assembled drilling of nanoholes into III/V semiconductor surfaces. An essential process …
assembled drilling of nanoholes into III/V semiconductor surfaces. An essential process …
Mechanism of nucleation and critical layer formation during In/GaAs droplet epitaxy
SV Balakirev, MS Solodovnik, MM Eremenko… - …, 2019 - iopscience.iop.org
Abstract Fabrication of A III BV nanostructures by droplet epitaxy has many advantages over
other epitaxial techniques. Although various characteristics of the growth by droplet epitaxy …
other epitaxial techniques. Although various characteristics of the growth by droplet epitaxy …
Droplet etching of deep nanoholes for filling with self-aligned complex quantum structures
Strain-free epitaxial quantum dots (QDs) are fabricated by a combination of Al local droplet
etching (LDE) of nanoholes in AlGaAs surfaces and subsequent hole filling with GaAs. The …
etching (LDE) of nanoholes in AlGaAs surfaces and subsequent hole filling with GaAs. The …
Fundamental role of arsenic flux in nanohole formation by Ga droplet etching on GaAs (001)
D Fuster, Y González, L González - Nanoscale research letters, 2014 - Springer
Nanoholes with a depth in the range of tens of nanometers can be formed on GaAs (001)
surfaces at a temperature of 500° C by local etching after Ga droplet formation. In this work …
surfaces at a temperature of 500° C by local etching after Ga droplet formation. In this work …