A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga2O3, Al2O3, In2O3, ZnO, SnO2, CdO, NiO, CuO, and …
This Review highlights basic and transition metal conducting and semiconducting oxides.
We discuss their material and electronic properties with an emphasis on the crystal …
We discuss their material and electronic properties with an emphasis on the crystal …
[HTML][HTML] A review of Ga2O3 materials, processing, and devices
Gallium oxide (Ga 2 O 3) is emerging as a viable candidate for certain classes of power
electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond …
electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond …
β-Ga2O3 for wide-bandgap electronics and optoelectronics
Z Galazka - Semiconductor Science and Technology, 2018 - iopscience.iop.org
Abstract β-Ga 2 O 3 is an emerging, ultra-wide bandgap (energy gap of 4.85 eV) transparent
semiconducting oxide, which attracted recently much scientific and technological attention …
semiconducting oxide, which attracted recently much scientific and technological attention …
[HTML][HTML] Deep level defect states in β-, α-, and ɛ-Ga2O3 crystals and films: Impact on device performance
AY Polyakov, VI Nikolaev, EB Yakimov, F Ren… - Journal of Vacuum …, 2022 - pubs.aip.org
A review is given of reported trap states in the bandgaps of different polymorphs of the
emerging ultrawide bandgap semiconductor Ga 2 O 3. The commonly observed defect …
emerging ultrawide bandgap semiconductor Ga 2 O 3. The commonly observed defect …
Deep-level defects in gallium oxide
As an ultrawide bandgap semiconductor, gallium oxide (Ga 2 O 3) has superior physical
properties and has been an emerging candidate in the applications of power electronics and …
properties and has been an emerging candidate in the applications of power electronics and …
A strategic review on gallium oxide based power electronics: Recent progress and future prospects
Silicon based power devices have limited capabilities in terms of voltage handling and
switching speeds, leading to rampant research in the field of next generation wide bandgap …
switching speeds, leading to rampant research in the field of next generation wide bandgap …
[HTML][HTML] Two inch diameter, highly conducting bulk β-Ga2O3 single crystals grown by the Czochralski method
Z Galazka, S Ganschow, P Seyidov, K Irmscher… - Applied Physics …, 2022 - pubs.aip.org
Two inch diameter, highly conducting (Si-doped) bulk β-Ga 2 O 3 single crystals with the
cylinder length up to one inch were grown by the Czochralski method. The obtained crystals …
cylinder length up to one inch were grown by the Czochralski method. The obtained crystals …
Systematic investigation of the growth kinetics of β-Ga2O3 epilayer by plasma enhanced chemical vapor deposition
C Wu, DY Guo, LY Zhang, PG Li, FB Zhang… - Applied Physics …, 2020 - pubs.aip.org
β-Ga 2 O 3 has attracted much attention due to its ultrawide-bandgap (∼ 4.9 eV) with a high
breakdown field (8 MV/cm) and good thermal/chemical stability. In order for β-Ga 2 O 3 to be …
breakdown field (8 MV/cm) and good thermal/chemical stability. In order for β-Ga 2 O 3 to be …
Review of gallium oxide based field-effect transistors and Schottky barrier diodes
Abstract Gallium oxide (Ga 2 O 3), a typical ultra wide bandgap semiconductor, with a
bandgap of∼ 4.9 eV, critical breakdown field of 8 MV/cm, and Baliga's figure of merit of …
bandgap of∼ 4.9 eV, critical breakdown field of 8 MV/cm, and Baliga's figure of merit of …
Valence and conduction band offsets of β-Ga2O3/AlN heterojunction
Both β-Ga 2 O 3 and wurtzite AlN have wide bandgaps of 4.5–4.9 and 6.1 eV, respectively.
We calculated the in-plane lattice mismatch between the (− 201) plane of β-Ga 2 O 3 and the …
We calculated the in-plane lattice mismatch between the (− 201) plane of β-Ga 2 O 3 and the …