Atomic layer deposition of metal oxides and chalcogenides for high performance transistors
Atomic layer deposition (ALD) is a deposition technique well‐suited to produce high‐quality
thin film materials at the nanoscale for applications in transistors. This review …
thin film materials at the nanoscale for applications in transistors. This review …
Overview of power electronic switches: A summary of the past, state-of-the-art and illumination of the future
As the need for green and effective utilization of energy continues to grow, the
advancements in the energy and power electronics industry are constantly driven by this …
advancements in the energy and power electronics industry are constantly driven by this …
[图书][B] Heteroepitaxy of semiconductors: theory, growth, and characterization
In the past ten years, heteroepitaxy has continued to increase in importance with the
explosive growth of the electronics industry and the development of a myriad of …
explosive growth of the electronics industry and the development of a myriad of …
Impact of channel thickness on the large-signal performance in InAlGaN/AlN/GaN HEMTs with an AlGaN back barrier
A Malmros, P Gamarra, M Thorsell… - … on Electron Devices, 2018 - ieeexplore.ieee.org
The impact of varying the GaN channel layer thickness (t ch) in InAlGaN/AlN/GaN HEMTs
with C-doped AlGaN back barriers is investigated. t ch was 50, 100, and 150 nm, and the …
with C-doped AlGaN back barriers is investigated. t ch was 50, 100, and 150 nm, and the …
Improved Power Performance and the Mechanism of AlGaN/GaN HEMTs Using Si-Rich SiN/Si3N4 Bilayer Passivation
AlGaN/GaN high-electron-mobility transistors (HEMTs) with Si-rich SiN/Si 3 N 4 bilayer
passivation were studied in this article. The use of a Si-rich SiN interlayer leads to improved …
passivation were studied in this article. The use of a Si-rich SiN interlayer leads to improved …
AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants
HC Wang, TE Hsieh, YC Lin, QH Luc… - IEEE Journal of the …, 2017 - ieeexplore.ieee.org
We demonstrate the electrical performances of AlGaN/GaN metal-insulator-semiconductor-
high electron mobility transistors (MIS-HEMTs) with high quality Al 2 O 3 gate dielectric …
high electron mobility transistors (MIS-HEMTs) with high quality Al 2 O 3 gate dielectric …
AlN/GaN/InGaN coupling-channel HEMTs with steep subthreshold swing of sub-60 mV/decade
This work reports an AlN/GaN/InGaN high electron mobility transistor (HEMT) with a steep
subthreshold swing (SS) of sub-60 mV/dec utilizing a coupling-channel architecture. The …
subthreshold swing (SS) of sub-60 mV/dec utilizing a coupling-channel architecture. The …
Current collapse suppression in AlGaN/GaN HEMTs using dual-layer SiNx stressor passivation
In this work, a dramatic reduction in current collapse is achieved in GaN-based high-electron-
mobility transistors (HEMTs) using dual-layer SiN x stressor passivation (DSSP), and the …
mobility transistors (HEMTs) using dual-layer SiN x stressor passivation (DSSP), and the …
Low resistive Au-free, Ta-based, recessed ohmic contacts to InAlN/AlN/GaN heterostructures
J Bergsten, A Malmros, M Tordjman… - Semiconductor …, 2015 - iopscience.iop.org
The formation of recess etched Au-free ohmic contacts to an InAlN/AlN/GaN heterostructure
is investigated. A Ta/Al/Ta metal stack is used to produce contacts with contact resistance (R …
is investigated. A Ta/Al/Ta metal stack is used to produce contacts with contact resistance (R …
Total-ionizing-dose responses of GaN-based HEMTs with different channel thicknesses and MOSHEMTs with epitaxial MgCaO as gate dielectric
The radiation hardness of AlGaN/GaN high-electron-mobility transistors (HEMTs) is found to
improve with increasing GaN channel thickness. Epitaxial MgCaO shows promise as a …
improve with increasing GaN channel thickness. Epitaxial MgCaO shows promise as a …