CJM: a compact model for double-gate junction FETs
The double-gate (DG) junction field-effect transistor (JFET) is a classical electron device,
with a simple structure that presents many advantages in terms of device fabrication but also …
with a simple structure that presents many advantages in terms of device fabrication but also …
Experimental study on short-channel effects in double-gate silicon carbide JFETs
M Kaneko, M Nakajima, Q Jin… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
Short-channel effects (SCEs) in double-gate silicon carbide junction field-effect transistors
(JFETs) fully fabricated by ion implantation are experimentally investigated. The threshold …
(JFETs) fully fabricated by ion implantation are experimentally investigated. The threshold …
Charge-based modeling of long-channel symmetric double-gate junction FETs—Part I: Drain current and transconductances
The double-gate (DG) junction field-effect transistor (JFET) is a classical electron device,
with a simple structure that presents many advantages in terms of not only device fabrication …
with a simple structure that presents many advantages in terms of not only device fabrication …
A compact model for static and dynamic operation of symmetric double-gate junction FETs
The present work describes a novel charge-based compact model of the symmetric double-
gate junction field effect transistor (DG JFET) for circuit simulation. The model is physics …
gate junction field effect transistor (DG JFET) for circuit simulation. The model is physics …
JFETIDG: A compact model for independent dual-gate JFETs with junction or MOS gates
K Xia, CC McAndrew - IEEE Transactions on Electron Devices, 2018 - ieeexplore.ieee.org
This paper presents the details of JFETIDG, a compact model for independent dual-gate
junction field-effect transistors with any combination of pn junction or MOS gates. JFETIDG …
junction field-effect transistors with any combination of pn junction or MOS gates. JFETIDG …
Compact/SPICE Modeling
W Grabinski, D Tomaszewski - Springer Handbook of Semiconductor …, 2022 - Springer
The microelectronics and nano-electronics industry strongly relies on compact models to
reduce a new microelectronic product development costs. The goals of this review are to …
reduce a new microelectronic product development costs. The goals of this review are to …
Dual-gate JFET modeling I: Generalization to include MOS gates and efficient method to calculate drain–source saturation voltage
This paper presents an accurate and computationally efficient method to calculate the drain-
source saturation voltage V dsat of dual-gate (ie, four-terminal) junction field-effect …
source saturation voltage V dsat of dual-gate (ie, four-terminal) junction field-effect …
JFETIDG: A compact model for independent dual-gate JFETs
K Xia, CC McAndrew, H Sheng - 2017 IEEE Electron Devices …, 2017 - ieeexplore.ieee.org
This paper presents a new compact model, JFETIDG, for independent dual-gate JFETs. The
model is applicable to JFETs with any combination of pn junction or MOS gates, captures …
model is applicable to JFETs with any combination of pn junction or MOS gates, captures …
DC and transient models of the MSET device
As a multigate device, the multiple‐state electrostatically formed nanowire transistor (MSET)
exhibits a rather complex characteristic on account of the coupling between each of its two …
exhibits a rather complex characteristic on account of the coupling between each of its two …
[PDF][PDF] CJM: A Compact Model for Double-Gate Junction FETs
JM SALLESE - academia.edu
The double-gate (DG) junction field-effect transistor (JFET) is a classical electron device,
with a simple structure that presents many advantages in terms of device fabrication but also …
with a simple structure that presents many advantages in terms of device fabrication but also …