We have performed pump-probe differential transmission spectroscopy (DTS)
measurements on In/sub 0.4/Ga/sub 0.6/As-GaAs-AlGaAs heterostructures, which show that …

The development and application of semiconductor light-emitting and laser diodes has been
a huge success during the last 30 years in key areas of modern technology like …

We have fabricated and studied injection lasers based on vertically coupled quantum dots
(VECODs). VECODs are self-organized during successive deposition of several sheets of …

The molecular beam epitaxy grown structures are investigated, comprising of InGaAs
quantum wells (QW) separated by a thin InGaAlAs barrier from InAs quantum dots (QDs) …

We study theoretically phonon-assisted relaxation and tunneling in a system composed of a
quantum dot which is coupled to a quantum well. Within the k· p method combined with the …

We have investigated optical properties of hybrid two-dimensional-zero-dimensional (2D-
0D) tunnel structures containing strongly elongated InAs/InP (001) quantum dots (called …

We investigate a hybrid system containing an In0. 53Ga0. 47As quantum well (QW),
separated by a thin 2 nm In0. 53Ga0. 23Al0. 24As barrier from 1.55 µm emitting InAs …

Here comes a report on the investigation of the energy transfer in InP-based tunnel injection
structures, consisting of In As∕ In Al Ga As quantum dashes (QDashes) and an In Ga As∕ …

The frequency behavior of the tunnel injection quantum dot vertical cavitysurface emitting
laser (TIQD-VCSEL) is investigated by using an analyticalnumericalmethod on the …

In this work, we investigated the dynamic properties of InGaAs quantum dot lasers in three
different configurations: edge emitting laser diodes, vertical surface emitting diodes and two …