Morphology, structure, and optical properties of semiconductor films with GeSiSn nanoislands and strained layers
V Timofeev, A Nikiforov, A Tuktamyshev… - Nanoscale Research …, 2018 - Springer
The dependences of the two-dimensional to three-dimensional growth (2D-3D) critical
transition thickness on the composition for GeSiSn films with a fixed Ge content and Sn …
transition thickness on the composition for GeSiSn films with a fixed Ge content and Sn …
Sn influence on MBE growth of GeSiSn/Si MQW
AR Tuktamyshev, VA Timofeev… - Journal of Physics …, 2017 - iopscience.iop.org
Temperature and composition dependencies of the critical thickness of transition from two-
dimensional to three-dimensional growth for GeSiSn films on Si (100) with a lattice mismatch …
dimensional to three-dimensional growth for GeSiSn films on Si (100) with a lattice mismatch …
Improving Group IV Photonics: Examining Material Properties of Epitaxially Grown, Low-Temperature Silicon and Gallium-Doped Silicon Thin Films
JM Manninen - 2019 - search.proquest.com
Group IV photonics is a field of study with increasing interest in CMOS compatible light
emitters. Binary Ge 1− x Sn x and ternary Si y Ge 1− y− x Sn x alloys have garnered the …
emitters. Binary Ge 1− x Sn x and ternary Si y Ge 1− y− x Sn x alloys have garnered the …
[PDF][PDF] Morphology, structure, and optical properties of semiconductor films with GeSiSn nanoislands and strained layers
AI Nikiforov, AR Tuktamyshev, VI Mashanov, M Yesin… - 2018 - vital.lib.tsu.ru
The dependences of the two-dimensional to three-dimensional growth (2D-3D) critical
transition thickness on the composition for GeSiSn films with a fixed Ge content and Sn …
transition thickness on the composition for GeSiSn films with a fixed Ge content and Sn …