A 28-GHz 32-element TRX phased-array IC with concurrent dual-polarized operation and orthogonal phase and gain control for 5G communications
This paper presents the first reported 28-GHz phased-array IC for 5G communications.
Implemented in 130-nm SiGe BiCMOS, the IC includes 32 TRX elements and features …
Implemented in 130-nm SiGe BiCMOS, the IC includes 32 TRX elements and features …
-Band Dual-Polarization Phased-Array Transceiver Front-End in SiGe BiCMOS
This paper discusses the design and implementation of a 94-GHz phased-array transceiver
front-end in SiGe BiCMOS that is capable of receiving concurrently in both vertical (V) and …
front-end in SiGe BiCMOS that is capable of receiving concurrently in both vertical (V) and …
Silicon integrated THz comb radiator and receiver for broadband sensing and imaging applications
S Razavian, A Babakhani - IEEE Transactions on Microwave …, 2021 - ieeexplore.ieee.org
This article presents a fully integrated terahertz (THz) comb/pulse radiator and a broadband
frequency-comb heterodyne receiver for sensing and imaging applications. The chipset is …
frequency-comb heterodyne receiver for sensing and imaging applications. The chipset is …
State of the art sub-terahertz switching solutions
J Sobolewski, Y Yashchyshyn - IEEE Access, 2022 - ieeexplore.ieee.org
In this paper the state of the art in RF switches for mm-wave frequency range is summarized
and evaluated. Several leading technologies is presented from typical semiconductor …
and evaluated. Several leading technologies is presented from typical semiconductor …
Highly isolating and broadband single-pole double-throw switches for millimeter-wave applications up to 330 GHz
F Thome, O Ambacher - IEEE Transactions on Microwave …, 2017 - ieeexplore.ieee.org
This paper reports on the investigation, design, and fabrication of single-pole double-throw
(SPDT) millimeter-wave integrated circuit (MMIC) switches for applications with an operating …
(SPDT) millimeter-wave integrated circuit (MMIC) switches for applications with an operating …
Low-loss millimeter-wave SPDT switch MMICs in a metamorphic HEMT technology
This letter presents the design and performance of two single-pole double-throw (SPDT)
switches operating in V-band (50-75 GHz) and W-band (75-110 GHz). The millimeterwave …
switches operating in V-band (50-75 GHz) and W-band (75-110 GHz). The millimeterwave …
A 24–28-GHz four-element phased-array transceiver front end with 21.1%/16.6% transmitter peak/OP1dB PAE and subdegree phase resolution supporting 2.4 Gb/s in …
W Zhu, J Wang, X Zhang, W Lv, B Liao… - IEEE Transactions …, 2021 - ieeexplore.ieee.org
This article presents a power efficient 24-28-GHz four-element phased-array transceiver
(TRX) front end (FE) for 5-G base stations and user equipment communications. A power …
(TRX) front end (FE) for 5-G base stations and user equipment communications. A power …
A 28-/60-GHz band-switchable bidirectional amplifier for reconfigurable mm-wave transceivers
AA Nawaz, JD Albrecht… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
Performance limits and design techniques for millimeter-wave amplifiers employing switches
for multiband operation are presented in this article. A bidirectional dual-band amplifier is …
for multiband operation are presented in this article. A bidirectional dual-band amplifier is …
Millimeter-wave single-pole double-throw switches based on a 100-nm gate-length AlGaN/GaN-HEMT technology
In this paper, the design, analysis, and performance of four millimeter-wave SPDT switch
MMICs are presented. The circuits utilize a 100-nm gate-length GaN-on-SiC technology and …
MMICs are presented. The circuits utilize a 100-nm gate-length GaN-on-SiC technology and …
W-band SPDT switches in planar and tri-gate 100-nm gate-length GaN-HEMT technology
This paper reports on W-band (75 to 110 GHz) single-pole double-throw (SPDT) switch
millimeter-wave integrated circuits (MMICs) based on a planar and a tri-gate 100-nm gate …
millimeter-wave integrated circuits (MMICs) based on a planar and a tri-gate 100-nm gate …