Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects
GaN technology is not only gaining traction in power and RF electronics but is also rapidly
expanding into other application areas including digital and quantum computing electronics …
expanding into other application areas including digital and quantum computing electronics …
Progress, challenges, and opportunities in oxide semiconductor devices: a key building block for applications ranging from display backplanes to 3D integrated …
As Si has faced physical limits on further scaling down, novel semiconducting materials such
as 2D transition metal dichalcogenides and oxide semiconductors (OSs) have gained …
as 2D transition metal dichalcogenides and oxide semiconductors (OSs) have gained …
GaN FinFETs and trigate devices for power and RF applications: Review and perspective
Gallium nitride (GaN) is becoming a mainstream semiconductor for power and radio-
frequency (RF) applications. While commercial GaN devices are increasingly being adopted …
frequency (RF) applications. While commercial GaN devices are increasingly being adopted …
Gbps terahertz external modulator based on a composite metamaterial with a double-channel heterostructure
Y Zhang, S Qiao, S Liang, Z Wu, Z Yang, Z Feng… - Nano …, 2015 - ACS Publications
The past few decades have witnessed a substantial increase in terahertz (THz) research.
Utilizing THz waves to transmit communication and imaging data has created a high …
Utilizing THz waves to transmit communication and imaging data has created a high …
3.3 kV multi-channel AlGaN/GaN Schottky barrier diodes with P-GaN termination
This work demonstrates five-channel AlGaN/GaN Schottky barrier diodes (SBDs) fabricated
on a 4-inch wafer with a sheet resistance of 115 Ω/sq. A novel edge termination based on …
on a 4-inch wafer with a sheet resistance of 115 Ω/sq. A novel edge termination based on …
The study of self-heating and hot-electron effects for AlGaN/GaN double-channel HEMTs
The direct current characteristics of AlGaN/GaN double-channel HEMTs (DC-HEMTs) are
investigated by using 2-D numerical simulations. The output characteristics have been …
investigated by using 2-D numerical simulations. The output characteristics have been …
Low on-resistance normally-off GaN double-channel metal–oxide–semiconductor high-electron-mobility transistor
A low on-resistance normally-off GaN double-channel metal–oxide–semiconductor high-
electron-mobility transistor (DC-MOS-HEMT) is proposed and demonstrated in this letter …
electron-mobility transistor (DC-MOS-HEMT) is proposed and demonstrated in this letter …
Multi-channel tri-gate normally-on/off AlGaN/GaN MOSHEMTs on Si substrate with high breakdown voltage and low ON-resistance
In this work, we present multi-channel tri-gate AlGaN/GaN metal-oxide-semiconductor high-
electron-mobility transistors (MOSHEMTs) for high-voltage applications. A heterostructure …
electron-mobility transistors (MOSHEMTs) for high-voltage applications. A heterostructure …
High-performance AlGaN double channel HEMTs with improved drain current density and high breakdown voltage
Y Zhang, Y Li, J Wang, Y Shen, L Du, Y Li… - Nanoscale Research …, 2020 - Springer
In this work, AlGaN double channel heterostructure is proposed and grown by metal organic
chemical vapor deposition (MOCVD), and high-performance AlGaN double channel high …
chemical vapor deposition (MOCVD), and high-performance AlGaN double channel high …
AlGaN/GaN/InGaN/GaN DH-HEMTs with an InGaN notch for enhanced carrier confinement
We report an AlGaN/GaN/InGaN/GaN double heterojunction high electron mobility
transistors (DH-HEMTs) with high-mobility two-dimensional electron gas (2-DEG) and …
transistors (DH-HEMTs) with high-mobility two-dimensional electron gas (2-DEG) and …