Due to its significant applications in many relevant fields, light detection in the solar‐blind
deep‐ultraviolet (DUV) wavelength region is a subject of great interest for both scientific and …

AlGaN-based materials own direct transition energy bands and wide bandgap and thus can
be used in high-efficiency ultraviolet (UV) emitters and detectors. Over the past two decades …

Solid state UV emitters have many advantages over conventional UV sources. The (Al, In,
Ga) N material system is best suited to produce LEDs and laser diodes from 400 nm down to …

High-performance vacuum-ultraviolet (VUV) photodetectors are of great significance to
space science, radiation monitoring, electronic industry and basic science. Due to the …

The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …

P-type doping of ultrawide-bandgap semiconductors, which are the key materials for
fabrication of next-generation high-performance optoelectronic and electronic devices, is …

It is a big challenge to grow β-Ga 2 O 3 films of good p-type conductivity and stability due to
the large acceptor ionization energy, strong hole-trapping effect, low hole mobility, and self …

Mg-doped AlN epilayers were grown by metalorganic chemical vapor deposition on
sapphire substrates. Deep UV picosecond time-resolved photoluminescence PL …

We present the analysis of the external quantum efficiency in AlGaN deep ultraviolet (DUV)
light-emitting diodes (LEDs) on sapphire substrates and discuss factors affecting the output …

Ultra-wide band-gap nitrides have huge potential in micro-and optoelectronics due to their
tunable wide band-gap, high breakdown field and energy density, excellent chemical and …