Structure of graphene and its disorders: a review
G Yang, L Li, WB Lee, MC Ng - Science and technology of …, 2018 - Taylor & Francis
Monolayer graphene exhibits extraordinary properties owing to the unique, regular
arrangement of atoms in it. However, graphene is usually modified for specific applications …
arrangement of atoms in it. However, graphene is usually modified for specific applications …
Raman spectroscopy as a versatile tool for studying the properties of graphene
AC Ferrari, DM Basko - Nature nanotechnology, 2013 - nature.com
Raman spectroscopy is an integral part of graphene research. It is used to determine the
number and orientation of layers, the quality and types of edge, and the effects of …
number and orientation of layers, the quality and types of edge, and the effects of …
Control and characterization of individual grains and grain boundaries in graphene grown by chemical vapour deposition
Q Yu, LA Jauregui, W Wu, R Colby, J Tian, Z Su… - Nature materials, 2011 - nature.com
The strong interest in graphene has motivated the scalable production of high-quality
graphene and graphene devices. As the large-scale graphene films synthesized so far are …
graphene and graphene devices. As the large-scale graphene films synthesized so far are …
Limits on intrinsic magnetism in graphene
M Sepioni, RR Nair, S Rablen, J Narayanan, F Tuna… - Physical review …, 2010 - APS
We have studied magnetization of graphene nanocrystals obtained by sonic exfoliation of
graphite. No ferromagnetism is detected at any temperature down to 2 K. Neither do we find …
graphite. No ferromagnetism is detected at any temperature down to 2 K. Neither do we find …
Precisely aligned graphene grown on hexagonal boron nitride by catalyst free chemical vapor deposition
To grow precisely aligned graphene on h-BN without metal catalyst is extremely important,
which allows for intriguing physical properties and devices of graphene/h-BN hetero …
which allows for intriguing physical properties and devices of graphene/h-BN hetero …
Anisotropic Etching of Atomically Thin MoS2
Exposure to oxygen at 300–340° C results in triangular etch pits with uniform orientation on
the surfaces of atomically thin molybdenum disulfide (MoS2), indicating anisotropic etching …
the surfaces of atomically thin molybdenum disulfide (MoS2), indicating anisotropic etching …
An anisotropic etching effect in the graphene basal plane
Graphene shows great potential for future electronics due to its extraordinary electrical
properties and structure-engineerable nature.[1–3] Control of the edge structure of graphene …
properties and structure-engineerable nature.[1–3] Control of the edge structure of graphene …
Origin of new broad Raman D and G peaks in annealed graphene
Since graphene, a single sheet of graphite, has all of its carbon atoms on the surface, its
property is very sensitive to materials contacting the surface. Herein, we report novel Raman …
property is very sensitive to materials contacting the surface. Herein, we report novel Raman …
Selective etching of graphene edges by hydrogen plasma
L Xie, L Jiao, H Dai - Journal of the American Chemical Society, 2010 - ACS Publications
We devised a controlled hydrogen plasma reaction at 300° C to etch graphene and
graphene nanoribbons (GNRs) selectively at the edges over the basal plane. Atomic force …
graphene nanoribbons (GNRs) selectively at the edges over the basal plane. Atomic force …