Stability and reliability of lateral GaN power field-effect transistors
JA Del Alamo, ES Lee - IEEE Transactions on Electron Devices, 2019 - ieeexplore.ieee.org
GaN electronics constitutes a revolutionary technology with power handling capabilities that
amply exceed those of Si and other semiconductors in many applications. RF, microwave …
amply exceed those of Si and other semiconductors in many applications. RF, microwave …
Dielectric elastomer actuators
E Hajiesmaili, DR Clarke - Journal of Applied Physics, 2021 - pubs.aip.org
Dielectric elastomer actuators (DEAs) are soft, electrically powered actuators that have no
discrete moving parts, yet can exhibit large strains (10%–50%) and moderate stress (∼ 100 …
discrete moving parts, yet can exhibit large strains (10%–50%) and moderate stress (∼ 100 …
Electrode dependence of filament formation in HfO2 resistive-switching memory
This study investigates bipolar and nonpolar resistive-switching of HfO 2 with various metal
electrodes. Supported by convincing physical and electrical evidence, it is our contention …
electrodes. Supported by convincing physical and electrical evidence, it is our contention …
Imaging dielectric breakdown in valence change memory
Dielectric breakdown (DB) controls the failure, and increasingly the function, of
microelectronic devices. Standard imaging techniques, which generate contrast based on …
microelectronic devices. Standard imaging techniques, which generate contrast based on …
Analog Resistive Switching and Synaptic Functions in WOx/TaOx Bilayer through Redox-Induced Trap-Controlled Conduction
WJ Chen, CH Cheng, PE Lin, YT Tseng… - ACS Applied …, 2019 - ACS Publications
The abrupt set/reset behavior of the Ta/TaO x/Pt resistive switching (RS) device is reformed
to a gradual mode by inserting a WO x layer between the TaO x active layer and the Ta top …
to a gradual mode by inserting a WO x layer between the TaO x active layer and the Ta top …
Electron transport through broken down ultra-thin SiO2 layers in MOS devices
When the gate insulator of a metal–oxide–semiconductor structure is subjected to electrical
stress, traps or defects are progressively generated inside the oxide that eventually lead to …
stress, traps or defects are progressively generated inside the oxide that eventually lead to …
Statistical simulation of leakage currents in MOS and flash memory devices with a new multiphonon trap-assisted tunneling model
L Larcher - IEEE Transactions on Electron Devices, 2003 - ieeexplore.ieee.org
A new physics-based model of leakage current suitable for MOS and Flash memory gate
oxide is presented in this paper. This model, which assumes the multiphonon trap-assisted …
oxide is presented in this paper. This model, which assumes the multiphonon trap-assisted …
Direct observation of self-heating in III–V gate-all-around nanowire MOSFETs
Gate-all-around (GAA) MOSFETs use multiple nanowires (NWs) to achieve target, along
with excellent 3-D electrostatic control of the channel. Although the self-heating effect has …
with excellent 3-D electrostatic control of the channel. Although the self-heating effect has …
Localized dielectric breakdown and antireflection coating in metal–oxide–semiconductor photoelectrodes
Silicon-based photoelectrodes for solar fuel production have attracted great interest over the
past decade, with the major challenge being silicon's vulnerability to corrosion. A metal …
past decade, with the major challenge being silicon's vulnerability to corrosion. A metal …
A study of soft and hard breakdown-Part II: Principles of area, thickness, and voltage scaling
For Part I see ibid., vol. 49, no. 2, pp. 232-8 (2002). Based on the theory of soft and hard
breakdown established in Part I of this paper, we now study the principles of area, thickness …
breakdown established in Part I of this paper, we now study the principles of area, thickness …