Wide-bandgap (WBG) material-based switching devices such as gallium nitride (GaN) high
electron mobility transistors (HEMTs) and silicon carbide (SiC) metal-oxide-semiconductor …

This paper presents a comprehensive survey of voltage balancing techniques for series-
connected SiC-MOSFETs. The concept of connecting power devices in series is appealing …

The dc circuit breaker (DCCB) plays an important protection role in the dc distribution
systems. And series power device stack is usually employed in the solid-state circuit breaker …

This article presents a cascaded gate driver (CGDA) architecture to improve the switching
speed of series-connected power devices. The main idea is to propose a new technique to …

In the fabrication of some high‐voltage low‐power applications, low cost is much concerned,
and thus using silicon carbide (SiC) MOSFET stack consisting of series connected low …

The single gate driven series connected power device stack possesses the advantages of
high compactness and low cost. However, research of its short circuit (SC) characteristic …

The main aim of this work is to present a step-by-step procedure to model and analyze the
power loss distribution of three-level Gallium Nitride (GaN) inverters. It has been applied to …

Recently, boost‐type current source inverters (CSIs) have received a considerable attention
in grid connected photovoltaic (PV) applications thanks to their salient features such as high …

A current-source gate driver (CSG) is considered as a candidate to improve the switching
performance of Silicon Carbide (SiC) MOSFET compared with a SiC MOSFET powered by a …

In some high-voltage low-power applications, silicon carbide metal-oxide-semiconductor
field-effect transistor (SiC MOSFET) stack is required to withstand the high voltage. Instead …