Doping engineering and functionalization of two-dimensional metal chalcogenides

P Luo, F Zhuge, Q Zhang, Y Chen, L Lv, Y Huang… - Nanoscale …, 2019 - pubs.rsc.org
Two-dimensional (2D) layered metal chalcogenides (MXs) have significant potential for use
in flexible transistors, optoelectronics, sensing and memory devices beyond the state-of-the …

Molecular approach to engineer two-dimensional devices for CMOS and beyond-CMOS applications

Y Zhao, M Gobbi, LE Hueso, P Samorì - Chemical Reviews, 2021 - ACS Publications
Two-dimensional materials (2DMs) have attracted tremendous research interest over the
last two decades. Their unique optical, electronic, thermal, and mechanical properties make …

Graphene-assisted metal transfer printing for wafer-scale integration of metal electrodes and two-dimensional materials

G Liu, Z Tian, Z Yang, Z Xue, M Zhang, X Hu… - Nature …, 2022 - nature.com
Metal–semiconductor junctions are essential components in electronic and optoelectronic
devices. With two-dimensional semiconductors, conventional metal deposition via ion …

[HTML][HTML] Van der Waals contacts between three-dimensional metals and two-dimensional semiconductors

Y Wang, JC Kim, RJ Wu, J Martinez, X Song, J Yang… - Nature, 2019 - nature.com
As the dimensions of the semiconducting channels in field-effect transistors decrease, the
contact resistance of the metal–semiconductor interface at the source and drain electrodes …

Ohmic contact engineering for two-dimensional materials

Y Zheng, J Gao, C Han, W Chen - Cell Reports Physical Science, 2021 - cell.com
One of the major areas of semiconductor device research is the development of transparent
or ohmic contacts between semiconductors and metal electrodes for the efficient injection of …

Pivotal roles of MoS2 in boosting catalytic degradation of aqueous organic pollutants by Fe (II)/PMS

B Sheng, F Yang, Y Wang, Z Wang, Q Li, Y Guo… - Chemical Engineering …, 2019 - Elsevier
Despite the success of Fe (II)/peroxymonsulfate (PMS) process in detoxifying organic
pollutants, its intrinsic drawback of sluggish Fe (III) conversion to Fe (II) limits its large-scale …

Self-aligned patterning of tantalum oxide on Cu/SiO2 through redox-coupled inherently selective atomic layer deposition

Y Li, Z Qi, Y Lan, K Cao, Y Wen, J Zhang, E Gu… - Nature …, 2023 - nature.com
Atomic-scale precision alignment is a bottleneck in the fabrication of next-generation
nanoelectronics. In this study, a redox-coupled inherently selective atomic layer deposition …

Fermi-level depinning of 2D transition metal dichalcogenide transistors

RS Chen, G Ding, Y Zhou, ST Han - Journal of Materials Chemistry C, 2021 - pubs.rsc.org
Recently, mainstream silicon (Si)-based materials and complementary metal oxide
semiconductor (CMOS) technology have been used in developing extremely tiny sized (of a …

[HTML][HTML] 3D self-assembled indium sulfide nanoreactor for in-situ surface covalent functionalization: Towards high-performance room-temperature NO2 sensing

Y Cheng, Z Li, T Tang, X Wang, X Hu, K Xu… - Journal of Colloid and …, 2023 - Elsevier
Thiol functionalization of two-dimensional (2D) metal sulfides has been demonstrated as an
effective approach to enhance the sensing performances. However, most thiol …

Graphene‐Enhanced Metal Transfer Printing for Strong van der Waals Contacts between 3D Metals and 2D Semiconductors

D Qi, P Li, H Ou, D Wu, W Lian, Z Wang… - Advanced Functional …, 2023 - Wiley Online Library
Abstract 2D semiconductors have shown great potentials for ultra‐short channel field‐effect
transistors (FETs) in next‐generation electronics. However, because of intractable surface …