Doping engineering and functionalization of two-dimensional metal chalcogenides
Two-dimensional (2D) layered metal chalcogenides (MXs) have significant potential for use
in flexible transistors, optoelectronics, sensing and memory devices beyond the state-of-the …
in flexible transistors, optoelectronics, sensing and memory devices beyond the state-of-the …
Molecular approach to engineer two-dimensional devices for CMOS and beyond-CMOS applications
Two-dimensional materials (2DMs) have attracted tremendous research interest over the
last two decades. Their unique optical, electronic, thermal, and mechanical properties make …
last two decades. Their unique optical, electronic, thermal, and mechanical properties make …
Graphene-assisted metal transfer printing for wafer-scale integration of metal electrodes and two-dimensional materials
Metal–semiconductor junctions are essential components in electronic and optoelectronic
devices. With two-dimensional semiconductors, conventional metal deposition via ion …
devices. With two-dimensional semiconductors, conventional metal deposition via ion …
[HTML][HTML] Van der Waals contacts between three-dimensional metals and two-dimensional semiconductors
As the dimensions of the semiconducting channels in field-effect transistors decrease, the
contact resistance of the metal–semiconductor interface at the source and drain electrodes …
contact resistance of the metal–semiconductor interface at the source and drain electrodes …
Ohmic contact engineering for two-dimensional materials
One of the major areas of semiconductor device research is the development of transparent
or ohmic contacts between semiconductors and metal electrodes for the efficient injection of …
or ohmic contacts between semiconductors and metal electrodes for the efficient injection of …
Pivotal roles of MoS2 in boosting catalytic degradation of aqueous organic pollutants by Fe (II)/PMS
Despite the success of Fe (II)/peroxymonsulfate (PMS) process in detoxifying organic
pollutants, its intrinsic drawback of sluggish Fe (III) conversion to Fe (II) limits its large-scale …
pollutants, its intrinsic drawback of sluggish Fe (III) conversion to Fe (II) limits its large-scale …
Self-aligned patterning of tantalum oxide on Cu/SiO2 through redox-coupled inherently selective atomic layer deposition
Atomic-scale precision alignment is a bottleneck in the fabrication of next-generation
nanoelectronics. In this study, a redox-coupled inherently selective atomic layer deposition …
nanoelectronics. In this study, a redox-coupled inherently selective atomic layer deposition …
Fermi-level depinning of 2D transition metal dichalcogenide transistors
Recently, mainstream silicon (Si)-based materials and complementary metal oxide
semiconductor (CMOS) technology have been used in developing extremely tiny sized (of a …
semiconductor (CMOS) technology have been used in developing extremely tiny sized (of a …
[HTML][HTML] 3D self-assembled indium sulfide nanoreactor for in-situ surface covalent functionalization: Towards high-performance room-temperature NO2 sensing
Y Cheng, Z Li, T Tang, X Wang, X Hu, K Xu… - Journal of Colloid and …, 2023 - Elsevier
Thiol functionalization of two-dimensional (2D) metal sulfides has been demonstrated as an
effective approach to enhance the sensing performances. However, most thiol …
effective approach to enhance the sensing performances. However, most thiol …
Graphene‐Enhanced Metal Transfer Printing for Strong van der Waals Contacts between 3D Metals and 2D Semiconductors
D Qi, P Li, H Ou, D Wu, W Lian, Z Wang… - Advanced Functional …, 2023 - Wiley Online Library
Abstract 2D semiconductors have shown great potentials for ultra‐short channel field‐effect
transistors (FETs) in next‐generation electronics. However, because of intractable surface …
transistors (FETs) in next‐generation electronics. However, because of intractable surface …