[HTML][HTML] Performance enhancement of ZnGa2O4 Schottky type deep-ultraviolet photodetectors by oxygen supercritical fluid treatment

A Sood, FG Tarntair, YX Wang, TC Chang, YH Chen… - Results in Physics, 2021 - Elsevier
For semiconductor device applications such as FinFET, MEMS, 2D materials, and wide
bandgap materials, reliability is one of the most powerful key factors for commercialization in …

Sn-guided self-grown Ge stripes banded by GeSn Nanowires: Formation mechanism and electric-field-induced switching from p-to n-type conduction

AV Kuchuk, PM Lytvyn, YI Mazur, H Stanchu… - Applied Surface …, 2022 - Elsevier
The formation of GeSn nanostructures catalyzed by Sn surface droplets during the growth of
Ge 1-x Sn x/Ge/Si (0 0 1) heterostructures provide a promising strategy for the growth of high …

In situ TEM investigation of indium oxide/titanium oxide nanowire heterostructures growth through solid state reactions

JH Chang, YT Tseng, AY Ho, HY Lo, CY Huang… - Materials …, 2022 - Elsevier
Abstract Heterostructured TiO 2/In 2 O 3 nanowires have been extensively applied in various
photonic devices; their performance is highly related to the microstructures, which has not …

Tuning the Liquid–Vapour Interface of VLS Epitaxy for Creating Novel Semiconductor Nanostructures

GR Suwito, VG Dubrovskii, Z Zhang, W Wang… - Nanomaterials, 2023 - mdpi.com
Controlling the morphology and composition of semiconductor nano-and micro-structures is
crucial for fundamental studies and applications. Here, Si-Ge semiconductor nanostructures …