From the discovery of giant magnetoresistance (GMR) to tunnel magnetoresistance (TMR),
their subsequent application in large capacity hard disk drives (HDDs) greatly speeded up …

Spin-transfer torque (STT) switching demonstrated in submicron sized magnetic tunnel
junctions (MTJs) has stimulated considerable interest for developments of STT switched …

Memristive devices are novel devices, which can be used in applications ranging from
memory and logic to neuromorphic systems. A memristive device offers several advantages …

Towards a magnetoelectric memory | Nature Materials Skip to main content Thank you for
visiting nature.com. You are using a browser version with limited support for CSS. To obtain the …

This paper explores the scalability of in-plane and perpendicular MTJ based STT-MRAMs
from 65 nm to 8 nm while taking into consideration realistic variability effects. We focus on …

Magnetic tunnel junctions (MTJs) composed of ferromagnetic layers with perpendicular
magnetic anisotropy (PMA) are of great interest for achieving high-density nonvolatile …

As CMOS technology begins to face significant scaling challenges, considerable research
efforts are being directed to investigate alternative device technologies that can serve as a …

Emerging byte-addressable nonvolatile memories (NVMs) promise persistent memory,
which allows processors to directly access persistent data in main memory. Yet, persistent …

Spin-transfer torque magnetic memory (STT-MRAM) has gained significant research interest
due to its nonvolatility and zero standby leakage, near unlimited endurance, excellent …

The emerging Spin Torque Transfer memory (STT-RAM) is a promising candidate for future
on-chip caches due to STT-RAM's high density, low leakage, long endurance and high …