Raman spectroscopy of hydrogen molecules in crystalline silicon
AWR Leitch, V Alex, J Weber - Physical review letters, 1998 - APS
We report on a Raman spectroscopy study of float-zone crystalline silicon after exposure to a
hydrogen plasma. New lines measured at 3601 and 2622 cm− 1 are attributed to vibrational …
hydrogen plasma. New lines measured at 3601 and 2622 cm− 1 are attributed to vibrational …
Hydrogen conversion in nanocages
E Ilisca - Hydrogen, 2021 - mdpi.com
Hydrogen molecules exist in the form of two distinct isomers that can be interconverted by
physical catalysis. These ortho and para forms have different thermodynamical properties …
physical catalysis. These ortho and para forms have different thermodynamical properties …
Isolated interstitial hydrogen molecules in hydrogenated crystalline silicon
RE Pritchard, MJ Ashwin, JH Tucker, RC Newman - Physical Review B, 1998 - APS
Infrared spectra of hydrogenated lightly doped Czochralski silicon show absorption due to
(a) modes of O i− H 2 centers (binding energy 0.26 eV), and (b) a mode labeled ν 3 HH at …
(a) modes of O i− H 2 centers (binding energy 0.26 eV), and (b) a mode labeled ν 3 HH at …
Hydrogen–oxygen interaction in silicon at around 50 C
VP Markevich, M Suezawa - Journal of applied physics, 1998 - pubs.aip.org
Formation kinetics of oxygen–hydrogen O–H complexes which give rise to an infrared
absorption line at 1075.1 cm 1 have been studied in Czochralski-grown silicon crystals in …
absorption line at 1075.1 cm 1 have been studied in Czochralski-grown silicon crystals in …
Deep level transient spectroscopic investigation of phosphorus-doped silicon by self-assembled molecular monolayers
It is known that self-assembled molecular monolayer doping technique has the advantages
of forming ultra-shallow junctions and introducing minimal defects in semiconductors. In this …
of forming ultra-shallow junctions and introducing minimal defects in semiconductors. In this …
Trapping and diffusion kinetic of hydrogen in carbon-cluster ion-implantation projected range in Czochralski silicon wafers
R Okuyama, A Masada, T Kadono… - Japanese Journal of …, 2017 - iopscience.iop.org
We investigated the diffusion behavior of hydrogen in a silicon wafer made by a carbon-
cluster ion-implantation technique after heat treatment and silicon epitaxial growth. A …
cluster ion-implantation technique after heat treatment and silicon epitaxial growth. A …
The interaction of hydrogen with deep level defects in silicon
Monatomic hydrogen is a very aggressive chemical specie, readily attacking Si-Si bonds,
creating an unusual bond centred defect. It reacts especially with strained bonds in …
creating an unusual bond centred defect. It reacts especially with strained bonds in …
Direct Detection of Free H2 Outgassing in Blisters Formed in Al2O3 Atomic Layers Deposited on Si and Methods of Its Prevention
R Matsumura, N Fukata - ACS Applied Materials & Interfaces, 2021 - ACS Publications
The phenomenon of blistering, seen in atomic layer-deposited aluminum oxide layers
caused by thermal treatment, represents a serious problem in the field of device fabrication …
caused by thermal treatment, represents a serious problem in the field of device fabrication …
Trapping and diffusion behaviour of hydrogen simulated with TCAD in projection range of carbon‐cluster implanted silicon epitaxial wafers for CMOS image sensors
R Okuyama, S Shigematsu, R Hirose… - … status solidi c, 2017 - Wiley Online Library
The trapping and diffusion behaviour of hydrogen in projection range of carbon‐cluster was
investigated by using a technology computer aided design (TCAD) simulation for high …
investigated by using a technology computer aided design (TCAD) simulation for high …
Towards understanding the hydrogen molecule in ZnO
SG Koch, EV Lavrov, J Weber - Physical Review B, 2014 - APS
The hydrogen molecule H 2 (or “hidden” hydrogen) in ZnO is studied by Raman scattering
spectroscopy. It is shown that H 2 is practically a free rotator stable up to 700∘ C, which is …
spectroscopy. It is shown that H 2 is practically a free rotator stable up to 700∘ C, which is …