Recent advances in GaN‐based power HEMT devices
The ever‐increasing power density and operation frequency in electrical power conversion
systems require the development of power devices that can outperform conventional Si …
systems require the development of power devices that can outperform conventional Si …
Kinetics of Buffer-Related RON-Increase in GaN-on-Silicon MIS-HEMTs
D Bisi, M Meneghini, FA Marino… - IEEE Electron …, 2014 - ieeexplore.ieee.org
This letter reports an extensive analysis of the charge capture transients induced by OFF-
state bias in double heterostructure AlGaN/GaN MIS-high electron mobility transistor grown …
state bias in double heterostructure AlGaN/GaN MIS-high electron mobility transistor grown …
Above 2000 V breakdown voltage at 600 K GaN‐on‐silicon high electron mobility transistors
N Herbecq, I Roch‐Jeune, A Linge… - … status solidi (a), 2016 - Wiley Online Library
We report a three‐terminal breakdown voltage over 3 kV on AlGaN/GaN high electron
mobility transistors (HEMTs) grown on 6‐in. silicon (111) substrate with a buffer thickness of …
mobility transistors (HEMTs) grown on 6‐in. silicon (111) substrate with a buffer thickness of …
Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers
Control of leakage currents in the buffer layers of GaN based transistors on Si substrates is
vital for the demonstration of high performance devices. Here, we show that the growth …
vital for the demonstration of high performance devices. Here, we show that the growth …
A temperature stable amplifier characteristics of AlGaN/GaN HEMTs on 3C-SiC/Si
A high temperature stable amplifier characteristics for L-band or 2 GHz was studied using
AlGaN/GaN high electron mobility transistors (HEMTs) on 3C-SiC/Si substrate. A crack free …
AlGaN/GaN high electron mobility transistors (HEMTs) on 3C-SiC/Si substrate. A crack free …
Numerical investigation of the lateral and vertical leakage currents and breakdown regimes in GaN-on-Silicon vertical structures
D Cornigli, S Reggiani, E Gnani… - 2015 IEEE …, 2015 - ieeexplore.ieee.org
A 2D TCAD-based approach is proposed to investigate the leakage current and breakdown
regime of GaN/AlGaN/Si structures at different ambient temperatures. Deep-level traps …
regime of GaN/AlGaN/Si structures at different ambient temperatures. Deep-level traps …
Impact of bias and device structure on gate junction temperature in AlGaN/GaN-on-Si HEMTs
The thermal impact of device bias-state and structures (such as source connected field
plates, gate-pitch, back-vias, and number of gate fingers) in AlGaN/GaN-on-Si high electron …
plates, gate-pitch, back-vias, and number of gate fingers) in AlGaN/GaN-on-Si high electron …
Impact of pits formed in the AlN nucleation layer on buffer leakage in GaN/AlGaN high electron mobility transistor structures on Si (111)
Limiting buffer layer current leakage is essential for the realization of high breakdown fields
in GaN-on-Si high electron mobility transistors (HEMTs). In this report, we demonstrate the …
in GaN-on-Si high electron mobility transistors (HEMTs). In this report, we demonstrate the …
Polarization dependent charge control model for microwave performance assessment of AlGaN/GaN/AlGaN double heterostructure HEMTs
An accurate polarization dependent charge control-based analytical model is proposed for
microwave performance assessment of Al _ 0.15 Ga _ 0.85 N/GaN/Al _ 0.15 Ga _ 0.85 N Al …
microwave performance assessment of Al _ 0.15 Ga _ 0.85 N/GaN/Al _ 0.15 Ga _ 0.85 N Al …
III-nitride field-effect transistor with dual gates
R Chu - US Patent 10,276,712, 2019 - Google Patents
ABSTRACT A field effect transistor (FET) includes a III-nitride channel layer, a III-nitride
barrier layer on the channel layer, a first dielectric on the barrier layer, a first gate trench …
barrier layer on the channel layer, a first dielectric on the barrier layer, a first gate trench …