The group‐III sesquioxides possess material properties that render them interesting for
applications such as high‐power rectifiers and transistors, solar‐blind UV detectors and inter …

Precise control of the heteroepitaxy on a low-cost foreign substrate is often the key to drive
the success of fabricating semiconductor devices in scale when a large low-cost native …

We demonstrate a marked increase in the possible growth domain and growth rate of the O
plasma-assisted molecular beam epitaxy of β-(Al x Ga 1− x) 2 O 3, by adding the element In …

We observe that the growth rate of Ga 2 O 3 in plasma-assisted molecular beam epitaxy can
be drastically enhanced by an additional In supply. This enhancement is shown to result …

The potential of gallium oxide (Ga 2 O 3) as a promising semiconductor for advanced
electronics and optoelectronics has been propelled by its wide bandgap, high breakdown …

Al and In dopants are codoped in β-Ga 2 O 3 nanostructures via hydrothermal synthesis.
Unlike single-dopant β-Ga 2 O 3 nanostructures, less mechanical strain is induced in the β …

We compute the lattice thermal conductivity of monoclinic β-Ga 2 O 3 and the ordered AlGaO
3 alloy from the phonon Boltzmann transport equation, with the harmonic and third-order …

Ga 2 O 3 is a wide-band-gap material of interest for a wide variety of devices, many of these
requiring heterostructures, for instance, to achieve carrier confinement. A common method to …

We perform first-principles calculations to investigate the crystal structure, elastic and
piezoelectric properties, and spontaneous polarization of orthorhombic M 2 O 3 (M= Al, Ga …

Ga 2 O 3 is a promising wide-bandgap material for electronic applications. The metastable
orthorhombic κ phase is of particular interest due to its large predicted spontaneous …