III-V-on-Si transistor technologies: Performance boosters and integration
In this work, we review progress in III-V transistor technologies. Key approaches for silicon
integration are described, with a distinction being made between large area layer transfer …
integration are described, with a distinction being made between large area layer transfer …
Sb-based semiconductors for low power electronics
Sb-based semiconductors incorporating heterostructures of InP, InAs, AlSb, InSb, GaSb,
InGaAs, InGaSb, GaAsSb and InGaAsSb can be used for high speed, low power …
InGaAs, InGaSb, GaAsSb and InGaAsSb can be used for high speed, low power …
Cryogenic InAs/AlSb HEMT wideband low-noise IF amplifier for ultra-low-power applications
A cryogenic wideband 4-8 GHz hybrid low-noise amplifier, based on a 110 nm gate length
InAs/AlSb HEMT process is presented. At room temperature the three-stage amplifier …
InAs/AlSb HEMT process is presented. At room temperature the three-stage amplifier …
Extra-low power consumption amplifier based on HEMT in unsaturated mode for use at subkelvin ambient temperatures
AM Korolev, VM Shulga, SI Tarapov - Cryogenics, 2014 - Elsevier
A new approach to deep-cooled amplifier design with microwatt level consumed/dissipated
power is presented. The relevant technique is based on exploiting the unsaturated regime of …
power is presented. The relevant technique is based on exploiting the unsaturated regime of …
AlSb nucleation induced anisotropic electron mobility in AlSb/InAs heterostructures on GaAs
L Desplanque, S El Kazzi, JL Codron, Y Wang… - Applied Physics …, 2012 - pubs.aip.org
The influence of the growth conditions at the AlSb/GaAs interface on the electron mobility in
AlSb/InAs heterostructures is investigated. We show that an excessive antimony flux during …
AlSb/InAs heterostructures is investigated. We show that an excessive antimony flux during …
InAs/AlSb HEMTs for cryogenic LNAs at ultra-low power dissipation
Properties of the InAs/AlSb high electron mobility transistor, essential for the design of a
cryogenic low-noise amplifier (LNA) operating at low power dissipation, have been studied …
cryogenic low-noise amplifier (LNA) operating at low power dissipation, have been studied …
PHEMT as a circuit element for high impedance nanopower amplifiers for ultra-low temperatures application
In this work, high electron mobility transistor (HEMT) was studied as a circuit element for
amplifiers operating at temperatures of the order of 10–100 mK. To characterize the HEMT …
amplifiers operating at temperatures of the order of 10–100 mK. To characterize the HEMT …
Planar InAs/AlSb HEMTs with ion-implanted isolation
The fabrication and performance of planar InAs/AlSb high-electron-mobility transistors
(HEMTs) based on ion-implantation isolation technology are reported. Ar atoms have been …
(HEMTs) based on ion-implantation isolation technology are reported. Ar atoms have been …
Transport mechanisms of leakage current in Al2O3/InAlAs MOS capacitors
C Jin, H Lu, Y Zhang, Y Zhang, H Guan, L Wu, B Lu… - Solid-State …, 2016 - Elsevier
An Al 2 O 3 layer is inserted between the InAlAs layer and the metal gate in InAs/AlSb
HEMTs to suppress the leakage current. The transport mechanisms of leakage current in Al …
HEMTs to suppress the leakage current. The transport mechanisms of leakage current in Al …
Device stress evaluation of InAs/AlSb HEMT on silicon substrate with refractory iridium Schottky gate metal
HC Chiu, WY Lin, CY Chou, SH Yang, KD Mai… - Microelectronic …, 2015 - Elsevier
In this work, the 6-inch AlSb/InAs on Si (0 0 1) substrate is used to increase device
integration and cost-effective purpose. The iridium (Ir)-gate was used for the InAs/AlSb on …
integration and cost-effective purpose. The iridium (Ir)-gate was used for the InAs/AlSb on …