According to an embodiment of a semiconductor device, the device includes gate trenches
formed in a SiC substrate and extending lengthwise in parallel in a first direction. Rows of …

A semiconductor device includes a semiconductor body and at least one device cell
integrated in the semiconductor body. Each device cell includes a drift region, a source …

(57) ABSTRACT A semiconductor device includes a plurality of gate trenches formed in a
first surface of a semiconductor body and extending lengthwise parallel to one another …

Embodiments of SiC devices and corresponding methods of manufacture are provided. In
some embodiments, the Sic device has shielding regions at the bottom of some gate …

(57) ABSTRACT A silicon carbide substrate has a trench extending from a main surface of
the silicon carbide substrate into the silicon carbide substrate. The trench has a trench width …

US10985248B2 - SiC power semiconductor device with integrated Schottky junction - Google
Patents US10985248B2 - SiC power semiconductor device with integrated Schottky junction …

(57) ABSTRACT A semiconductor device includes a region of semiconductor material
comprising a semiconductor layer of a first con ductivity type and having a first major surface …

(57) ABSTRACT A semiconductor device includes a region of semiconductor material
comprising a semiconductor layer of a first con ductivity type and having a first major surface …

(57) ABSTRACT A semiconductor device, including a first semiconductor layer of the first
conductivity type formed on a semicon ductor substrate, a first semiconductor region of the …

US11171248B2 - Schottky rectifier with surge-current ruggedness - Google Patents
US11171248B2 - Schottky rectifier with surge-current ruggedness - Google Patents Schottky …