Charge and phonon transport in PbTe-based thermoelectric materials

Y Xiao, LD Zhao - npj Quantum Materials, 2018 - nature.com
PbTe is a typical intermediate-temperature thermoelectric material, which has undergone
extensive developments and achieved excellent high thermoelectric performance. In this …

Enhancement of thermoelectric performance for n-type PbS through synergy of gap state and fermi level pinning

ZZ Luo, S Hao, S Cai, TP Bailey, G Tan… - Journal of the …, 2019 - ACS Publications
We report that Ga-doped and Ga–In-codoped n-type PbS samples show excellent
thermoelectric performance in the intermediate temperature range. First-principles electronic …

Designing band engineering for thermoelectrics starting from the periodic table of elements

X Tan, H Wang, G Liu, JG Noudem, H Hu, J Xu… - Materials Today …, 2018 - Elsevier
Band engineering is an important experimental approach to increase the thermopower of
thermoelectric materials, whereas the underlying mechanism has been barely clarified. In …

Dilute Sc/Y doping in SnTe for efficient charge transport modulation and high thermoelectric performance

F Guo, S Zhao, Y Sun, J Zhu, Z Liu, R Wang, B Li… - Materials Today …, 2023 - Elsevier
As a highly potential environmental-friendly medium-temperature thermoelectric material,
pure SnTe exhibits relatively poor performance due to its intrinsic high carrier concentration …

Higher mobility in bulk semiconductors by separating the dopants from the charge-conducting band–a case study of thermoelectric PbSe

G JeffreyáSnyder - Materials Horizons, 2015 - pubs.rsc.org
In the rigid band approximation dopants in semiconductors only change the Fermi level and
carrier concentration such that different dopants are thought equivalent when fully ionized. In …

Thermopower of thermoelectric materials with resonant levels: PbTe:Tl versus PbTe:Na and

B Wiendlocha - Physical Review B, 2018 - APS
Electronic transport properties of thermoelectric materials containing resonant levels are
discussed by analyzing the two best known examples: copper-nickel metallic alloy (Cu-Ni …

Fermi level pinning in Fe-doped PbTe under pressure

EP Skipetrov, OV Kruleveckaya, LA Skipetrova… - Applied Physics …, 2014 - pubs.aip.org
We synthesize an iron-doped PbTe single-crystal ingot and investigate the phase and the
elemental composition as well as galvanomagnetic properties in weak magnetic fields (4.2 …

Theoretical understanding on band engineering of Mn-doped lead chalcogenides PbX (X= Te, Se, S)

X Tan, H Shao, T Hu, GQ Liu… - Journal of Physics …, 2015 - iopscience.iop.org
Electronic structures of Mn-doped PbX (X= Te, Se, S) are investigated by first-principles
calculations. It is found that the Mn-doping in PbTe enlarges the band gap and increases the …

Galvanomagnetic properties and electronic structure of iron-doped PbTe

EP Skipetrov, OV Kruleveckaya… - Journal of Applied …, 2015 - pubs.aip.org
We synthesize an iron-doped PbTe single-crystal ingot and investigate the phase
composition and distribution of the iron impurity along the ingot as well as galvanomagnetic …

[PDF][PDF] 热电材料的载流子迁移率优化

赵立东, 王思宁, 肖钰 - 金属学报, 2021 - researchgate.net
摘要热电材料是一种能将热能与电能直接相互转换的功能材料, 其热电转换效率由材料的平均
热电优值决定. 高热电优值要求材料同时具有高的电传输性能和低的热导率, 即“电子晶体 …