Gate-controlled reversible rectifying behavior investigated in a two-dimensional diode
Q Liu, JJ Li, D Wu, XQ Deng, ZH Zhang, ZQ Fan… - Physical Review B, 2021 - APS
By using density functional theory and ab initio quantum-transport simulation, we study the
Schottky barrier and the rectifying behavior of diodes consisting of the two-dimensional …
Schottky barrier and the rectifying behavior of diodes consisting of the two-dimensional …
Research Progress of Resonance Optical Fiber Sensors Modified by Low‐Dimensional Materials
Resonance optical fiber sensors are widely studied for their high sensitivity, small size, and
anti‐electromagnetic interference. However, traditional resonance optical fiber sensors have …
anti‐electromagnetic interference. However, traditional resonance optical fiber sensors have …
Phonon anharmonicity and thermal conductivity of two-dimensional van der Waals materials: A review
Abstract Two-dimensional (2D) van der Waals (vdW) materials have extraordinary thermal
properties due to the effect of quantum confinement, making them promising for …
properties due to the effect of quantum confinement, making them promising for …
High performance piezotronic thermoelectric devices based on zigzag MoS2 nanoribbon
D Tang, M Dan, Y Zhang - Nano Energy, 2022 - Elsevier
Piezotronic and piezophototronic devices have high performance due to the coupling of
piezoelectric and semiconductor properties. Strain-induced polarization can effectively …
piezoelectric and semiconductor properties. Strain-induced polarization can effectively …
Electric field tuning of the properties of monolayer hexagonal boron phosphide
M Yarmohammadi, K Mirabbaszadeh - Journal of Applied Physics, 2020 - pubs.aip.org
External factors are known to significantly modify the properties of low-dimensional
materials. Here, we show that a perpendicular electric field can tune the fundamental …
materials. Here, we show that a perpendicular electric field can tune the fundamental …
High performance quantum piezotronic tunneling transistor based on edge states of MoS2 nanoribbon
High performance edge states-based quantum piezotronic tunneling transistor with MoS 2
nanoribbon device architecture at room temperature is demonstrated. The edge states are …
nanoribbon device architecture at room temperature is demonstrated. The edge states are …
[HTML][HTML] Surface asymmetry induced turn-overed lifetime of acoustic phonons in monolayer MoSSe
Recent successful growth of asymmetric transition metal dichalcogenides via accurate
manipulation of different chalcogen atoms in top and bottom surfaces demonstrates exotic …
manipulation of different chalcogen atoms in top and bottom surfaces demonstrates exotic …
Polarization-driven high Rabi frequency of piezotronic valley transistors
The properties of spin and valley transport of piezotronics valley transistor is studied based
on a normal/ferromagnetic/normal (NFN) structure of monolayer (ML) transition metal …
on a normal/ferromagnetic/normal (NFN) structure of monolayer (ML) transition metal …
A type of piezotronic transistor based on channel width modulation to directly respond to normal force
YZ Qin, Q Xu - Materials Today Chemistry, 2024 - Elsevier
Developing logic gates through mechanical modulation is important to realize the complex
functionality in artificial intelligence, artificial neural network and human-machine interface …
functionality in artificial intelligence, artificial neural network and human-machine interface …
Multifunctional spintronic device based on zigzag SiC nanoribbon heterojunction via edge asymmetric dual-hydrogenation
XQ Cui, JJ Li, Q Liu, D Wu, HQ Xie, ZQ Fan… - Physica E: Low …, 2022 - Elsevier
The authors propose a method to obtain the multifunctional spintronic device by
investigating the spin-resolved transport characteristics of zigzag SiC nanoribbon (zSiCNR) …
investigating the spin-resolved transport characteristics of zigzag SiC nanoribbon (zSiCNR) …