ZnO is an interesting wide band-gap semiconductor, which can be found in a number of
widespread applications including varistors, phosphors, surface acoustic wave devices, and …

The effect of longitudinal optical phonon field on the ground state and low lying-excited state
energies of a hydrogenic impurity in a Zn1− xCdxSe/ZnSe strained quantum dot is …

We present a calculation of the variation of the binding energy of a heavy-hole exciton in a
highly ionic quantum well structure, as a function of well width using a variational approach …

We investigated the excitonic or free-carrier nature of lasing in ZnCdSe/ZnSe quantum wells
through stimulated emission measurements in high magnetic field and by pump–probe …

Transient photoluminescence measurements are reported on a thin InGaN single quantum
well, encompassing the high injection regime. The radiative processes that dominate the …

For the synthesis of colloidal ternary ZnCdSe nanorods, CdSe nanorods were first prepared
under a mixture of tetradecylphosphonic acid/trioctylphosphine oxide surfactants at 250 C⁠ …

A theoretical method for studying the properties of 1 s and 2 s excitons in polar quantum
wells with finite potential barriers is presented. Exciton–optical-phonon interaction together …

The ground states of interface polarons in a realistic heterojunction potential are
investigated by considering the bulk and the interface optical phonon influence. A self …

The influence of Coulomb correlations on gain and stimulated emission in (Zn, Cd) Se/Zn (S,
Se)/(Zn, Mg)(S, Se) quantum-well lasers is studied under stationary conditions. Systematic …

Electronic energies of an exciton confined in a strained Zn 1− x Cd x Se/ZnSe quantum dot
have been computed as a function of dot radius with various Cd content. Calculations have …