A method of manufacturing a nanostructure semiconductor light emitting device including
providing a base layer formed of a first conductivity type semiconductor. A mask including an …

A method of manufacturing a light emitting diode (LED) package may include forming a light
emitting structure having a first conductivity-type semiconductor layer, an active layer and a …

There is provided a semiconductor light-emitting device including a base layer formed of a
first conductivity-type semiconductor material, and a plurality of light-emitting nanostructures …

Provided is a nano-structured light-emitting device including: a first type semiconductor
layer; a plurality of nanostructures which are formed on the first type semiconductor layer …

BACKGROUND 0002 The present invention generally relates to optoelec tronic devices
based on semiconductor materials and to meth ods for manufacturing the same. The present …

An optoelectronic device including a semiconductor Sub strate having a face, light-emitting
diodes arranged on the face and including wired conical or frustoconical semicon ductor …

Various embodiments include methods of fabricating a semi conductor device that include
forming a plurality of nanow ires on a Support, wherein each nanowire comprises a first …

A method for manufacturing a semiconductor device includes providing a semiconductor
substrate, forming a first dielectric layer having a first thickness on the semiconductor …

(57) ABSTRACT A method of manufacturing a light-emitting element includes: forming a
plurality of rod-shaped layered structures by performing steps including: forming a first …

Various embodiments include methods of fabricating light emitting diode (LED) devices,
such as nanowire LED devices, that include forming a layer of a transparent, electrically …