β-Ga2O3 material properties, growth technologies, and devices: a review
M Higashiwaki - AAPPS Bulletin, 2022 - Springer
Rapid progress in β-gallium oxide (β-Ga 2 O 3) material and device technologies has been
made in this decade, and its superior material properties based on the very large bandgap …
made in this decade, and its superior material properties based on the very large bandgap …
Vertical β-Ga₂O₃ Power Transistors: A Review
MH Wong, M Higashiwaki - IEEE Transactions on Electron …, 2020 - ieeexplore.ieee.org
With projected performance advantages over silicon and incumbent wide-bandgap
compound semiconductors, gallium oxide (Ga 2 O 3) has garnered worldwide attention as …
compound semiconductors, gallium oxide (Ga 2 O 3) has garnered worldwide attention as …
[HTML][HTML] β-Gallium oxide power electronics
Gallium Oxide has undergone rapid technological maturation over the last decade, pushing
it to the forefront of ultra-wide band gap semiconductor technologies. Maximizing the …
it to the forefront of ultra-wide band gap semiconductor technologies. Maximizing the …
High-k Oxide Field-Plated Vertical (001) β-Ga2O3 Schottky Barrier Diode With Baliga's Figure of Merit Over 1 GW/cm2
We report a vertical (001) β-Ga2O3 field-plated (FP) Schottky barrier diode (SBD) with a
novel extreme permittivity dielectric field oxide. A thin drift layer of 1.7 μm was used to …
novel extreme permittivity dielectric field oxide. A thin drift layer of 1.7 μm was used to …
β-(Al0.18Ga0.82)2O3/Ga2O3 Double Heterojunction Transistor With Average Field of 5.5 MV/cm
Maintaining high average fields between the gate and drain is imperative in achieving near
theoretical performance in ultra-wide band gap semiconductors like β-Ga 2 O 3. In this letter …
theoretical performance in ultra-wide band gap semiconductors like β-Ga 2 O 3. In this letter …
2.1 kV (001)-β-Ga2O3 vertical Schottky barrier diode with high-k oxide field plate
We report a vertical β-Ga2O3 Schottky barrier diode (SBD) with BaTiO3 as field plate oxide
on a low doped thick epitaxial layer exhibiting 2.1 kV breakdown voltage. A thick drift layer of …
on a low doped thick epitaxial layer exhibiting 2.1 kV breakdown voltage. A thick drift layer of …
[HTML][HTML] Vertical β-Ga2O3 field plate Schottky barrier diode from metal-organic chemical vapor deposition
Vertical β-Ga 2 O 3 Schottky diodes from metal-organic chemical vapor deposition (MOCVD)-
grown epitaxial films are reported in this paper for high-power application devices. The …
grown epitaxial films are reported in this paper for high-power application devices. The …
β-Ga₂O₃ Lateral High-Permittivity Dielectric Superjunction Schottky Barrier Diode With 1.34 GW/cm² Power Figure of Merit
In this work, we demonstrate lateral-Ga2O3 Schottky barrier diode (SBD) with a high
permittivity (high-k) dielectric superjunction (SJ) structure. Trenches are patterned on the …
permittivity (high-k) dielectric superjunction (SJ) structure. Trenches are patterned on the …
[HTML][HTML] Sn doping of (010) β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy
Sn doping of (010) β-Ga 2 O 3 grown by conventional plasma-assisted molecular beam
epitaxy (PAMBE) and via metal oxide catalyzed epitaxy (MOCATAXY) using a supplied …
epitaxy (PAMBE) and via metal oxide catalyzed epitaxy (MOCATAXY) using a supplied …
[HTML][HTML] Ge doping of β-Ga2O3 by MOCVD
F Alema, G Seryogin, A Osinsky, A Osinsky - APL Materials, 2021 - pubs.aip.org
We report on the Ge doping of Ga 2 O 3 using metalorganic chemical vapor deposition
(MOCVD) epitaxy. The effects of the GeH 4/N 2 flow rate, substrate temperature, VI/III ratio …
(MOCVD) epitaxy. The effects of the GeH 4/N 2 flow rate, substrate temperature, VI/III ratio …