Scaling silicon-based quantum computing using CMOS technology

MF Gonzalez-Zalba, S De Franceschi, E Charbon… - Nature …, 2021 - nature.com
As quantum processors grow in complexity, attention is moving to the scaling prospects of
the entire quantum computing system, including the classical support hardware. Recent …

A review on quantum computing: From qubits to front-end electronics and cryogenic MOSFET physics

F Jazaeri, A Beckers, A Tajalli… - 2019 MIXDES-26th …, 2019 - ieeexplore.ieee.org
Quantum computing (QC) has already entered the industrial landscape and several
multinational corporations have initiated their own research efforts. So far, many of these …

Theoretical limit of low temperature subthreshold swing in field-effect transistors

A Beckers, F Jazaeri, C Enz - IEEE Electron Device Letters, 2019 - ieeexplore.ieee.org
This letter reports a temperature-dependent limit for the subthreshold swing in MOSFETs
that deviates from the Boltzmann limit at deep-cryogenic temperatures. Below a critical …

Design and characterization of a 28-nm bulk-CMOS cryogenic quantum controller dissipating less than 2 mW at 3 K

JC Bardin, E Jeffrey, E Lucero, T Huang… - IEEE Journal of Solid …, 2019 - ieeexplore.ieee.org
Implementation of an error-corrected quantum computer is believed to require a quantum
processor with a million or more physical qubits, and, in order to run such a processor, a …

A scalable cryo-CMOS controller for the wideband frequency-multiplexed control of spin qubits and transmons

JPG Van Dijk, B Patra, S Subramanian… - IEEE Journal of Solid …, 2020 - ieeexplore.ieee.org
Building a large-scale quantum computer requires the co-optimization of both the quantum
bits (qubits) and their control electronics. By operating the CMOS control circuits at cryogenic …

Compact modeling of temperature effects in FDSOI and FinFET devices down to cryogenic temperatures

G Pahwa, P Kushwaha, A Dasgupta… - … on Electron Devices, 2021 - ieeexplore.ieee.org
We present compact models that capture published cryogenic temperature effects on silicon
carrier mobility and velocity saturation, as well as fully depleted silicon on insulator (FDSOI) …

Physical model of low-temperature to cryogenic threshold voltage in MOSFETs

A Beckers, F Jazaeri, A Grill… - IEEE Journal of the …, 2020 - ieeexplore.ieee.org
This article presents a physical model of the threshold voltage in MOSFETs valid down to 4.2
K. Interface traps close to the band edge modify the saturating temperature behavior of the …

A cryogenic broadband sub-1-dB NF CMOS low noise amplifier for quantum applications

Y Peng, A Ruffino, E Charbon - IEEE Journal of Solid-State …, 2021 - ieeexplore.ieee.org
A cryogenic broadband low noise amplifier (LNA) for quantum applications based on a
standard 40-nm CMOS technology is reported. The LNA specifications are derived from the …

Characterization and modeling of mismatch in cryo-CMOS

M Babaie, E Charbon, A Vladimirescu… - IEEE Journal of the …, 2020 - ieeexplore.ieee.org
This paper presents a device matching study of a commercial 40-nm bulk CMOS technology
operated at cryogenic temperatures. Transistor pairs and linear arrays, optimized for device …

Characterization and analysis of on-chip microwave passive components at cryogenic temperatures

B Patra, M Mehrpoo, A Ruffino… - IEEE Journal of the …, 2020 - ieeexplore.ieee.org
This paper presents the characterization and modeling of microwave passive components in
TSMC 40-nm bulk CMOS, including metal-oxide-metal (MoM) capacitors, transformers, and …