This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …

Memristive devices are electrical resistance switches that can retain a state of internal
resistance based on the history of applied voltage and current. These devices can store and …

High‐performance memristors based on AlN films have been demonstrated, which exhibit
ultrafast ON/OFF switching times (≈ 85 ps for microdevices with waveguide) and relatively …

Memristors are one of the emerging technologies that can potentially replace state-of-the-art
integrated electronic devices for advanced computing and digital and analog circuit …

Memristive cells based on different physical effects, that is, phase change, valence change,
and electrochemical processes, are discussed with respect to their potential to overcome the …

Resistive switching memories based on the valence change mechanism have attracted
great attention due to their potential use in future nanoelectronics. The working principle …

We show that the SET operation of a unipolar memristor could be explained by
thermophoresis, or the Soret effect, which is the diffusion of atoms, ions or vacancies in a …

The demand for highly scalable, low-power devices for data storage and logic operations is
strongly stimulating research into resistive switching as a novel concept for future non …

In this review of experimental studies, the retention time and endurance of memristor RRAM
memory elements based on reversible resistive switching in oxide dielectrics are studied …

Due to the fast evolution of information technology, high-speed and scalable memory
devices are being investigated for data storage and data-driven computation. Resistive …