In the last couple of decades, high-performance electronic and optoelectronic devices based
on semiconductor heterostructures have been required to obtain increasingly strict and well …

Compound semiconductor alloys such as In x Ga 1− x As, GaAs x P 1− x, or CuIn x Ga 1− x
Se 2 are increasingly employed in numerous electronic, optoelectronic, and photonic …

We report on the detailed assignment of various features observed in the Raman spectra of
SiGe alloys along the linear chain approximation (LCA), as achieved based on remarkable …

We present an extended X-ray absorption fine structure investigation of the local
environment of Sn atoms in strained and relaxed Ge1ÀxSnx layers with different …

The tracer self-diffusion coefficients DT of implanted 71Ge and 31Si in both relaxed
monocrystalline SiyGe1–y epilayers and specimens made from bulk SiyGe1–y have been …

Structural and dynamical properties of amorphous silicon-germanium (a− Si 1− x Ge x)
alloys have been examined by molecular dynamics simulations using the Tersoff interatomic …

The composition dependence of the optical and structural properties of G e 1-x S ix
nanocrystals is investigated by means of ab initio total-energy and electronic-structure …

We have investigated the structural and optical properties of metastable amorphous and
crystalline GeSn layers on Si substrates. The as-deposited amorphous layers crystallize …

Porous GaSb has been formed by Ga ion implantation into crystalline GaSb substrates at
either room temperature or− 180 C. The morphology has been characterized using scanning …

Using magnetron cosputtering of Si O 2⁠, Ge, and Si targets, Si-based Si O 2: Ge: Si films
were fabricated for exploring the influence of Si target proportion (P Si) and annealing …