Indium nitride nanoparticles prepared by laser ablation in liquid
KS Khashan, SF Abbas - International Journal of Nanoscience, 2019 - World Scientific
Indium nitride InN nanoparticles NPs suspension prepared by Nd: YAG laser ablation of
indium target submerged under ammonium hydroxide. The Scanning electron microscopy, X …
indium target submerged under ammonium hydroxide. The Scanning electron microscopy, X …
Characterization of InN nanoparticles prepared by laser as photodetector
KS Khashan, SF Abbas - International Journal of Modern Physics B, 2016 - World Scientific
Indium nitride (InN) nanoparticles (NPs) are a potentially important material for
optoelectronic and high speed electronic devices. Using 1064 nm Nd: YAG laser, InN NPs …
optoelectronic and high speed electronic devices. Using 1064 nm Nd: YAG laser, InN NPs …
Fabrication and properties of InN NPs/Si as a photodetector
Abstract Indium nitride InN nanoparticles NPs are synthesized by laser ablation of indium
target in ammonium hydroxide solution. The scanning electron microscope SEM, Fourier …
target in ammonium hydroxide solution. The scanning electron microscope SEM, Fourier …
Vibrational and dielectric properties of InN in orthorhombic Pnma phase
M Majidiyan, R Vali - Journal of Physics and Chemistry of Solids, 2023 - Elsevier
We have determined the lattice vibrational and dielectric properties of the newly predicted
orthorhombic Pnma-InN, using the density functional perturbation theory. The origin of the …
orthorhombic Pnma-InN, using the density functional perturbation theory. The origin of the …
Characteristics of indium nitride thin films deposited on silicon substrates by reactive sputtering with nitride buffer layers
AM Hassan, AS Hamad, KA Mhawsh… - Iraqi Journal of Applied …, 2022 - iasj.net
In this work, nanostructured InN thin films were deposited on (100) silicon substrates using
reactive sputtering technique. Moreover, two different nitride (GaN or AlN) films were …
reactive sputtering technique. Moreover, two different nitride (GaN or AlN) films were …
Low-temperature solution-processed flexible solar cells based on (In, Ga) N nanocubes
Indium gallium nitride nanocubes were syntheized via a low-temperature chemical route.
Energy-dispersive X-ray spectroscopy and X-ray diffraction analyses confirmed the …
Energy-dispersive X-ray spectroscopy and X-ray diffraction analyses confirmed the …
GaN and GaxIn1−xN Nanoparticles with Tunable Indium Content: Synthesis and Characterization
Abstract Semiconducting GaN and GaxIn1− xN nanoparticles (4–10 nm in diameter,
depending on the metal ratio) with tunable indium content are prepared through a chemical …
depending on the metal ratio) with tunable indium content are prepared through a chemical …
New issue of GaN nanoparticles solar cell
This study involves the synthesis of gallium nitride (GaN) nanoparticles (NPs) under different
low temperatures using a simple chemical method. The nanoparticles are spin coated on Si …
low temperatures using a simple chemical method. The nanoparticles are spin coated on Si …
Generation of ultra-small InN nanocrystals by pulsed laser ablation of suspension in organic solution
C Kurşungöz, E Uzcengiz Şimşek, R Tuzaklı, B Ortaç - Applied Physics A, 2017 - Springer
Nanostructures of InN have been extensively investigated since nano-size provides a
number of advantages allowing applications in nanoscale electronic and optoelectronic …
number of advantages allowing applications in nanoscale electronic and optoelectronic …
Study on the Performance Impact of Introducing an InN Buffer Layer at Various Deposition Temperatures on InN Film Grown by ECR-PEMOCVD on Free-Standing …
S Wang, X Guan, S Liu, D Zhang - Coatings, 2022 - mdpi.com
In this study, InN films are grown at a relatively low temperature by electron cyclotron
resonance plasma-enhanced metal organic chemical vapor deposition (ECR-PEMOCVD) …
resonance plasma-enhanced metal organic chemical vapor deposition (ECR-PEMOCVD) …