Strong Exciton–Phonon Coupling as a Fingerprint of Magnetic Ordering in van der Waals Layered CrSBr
The layered, air-stable van der Waals antiferromagnetic compound CrSBr exhibits
pronounced coupling among its optical, electronic, and magnetic properties. As an example …
pronounced coupling among its optical, electronic, and magnetic properties. As an example …
Heterodimensional charge-carrier confinement in stacked submonolayer InAs in GaAs
S Harrison, MP Young, PD Hodgson, RJ Young… - Physical Review B, 2016 - APS
Charge-carrier confinement in nanoscale In-rich agglomerations within a lateral InGaAs
quantum well (QW) formed from stacked submonolayers (SMLs) of InAs in GaAs is studied …
quantum well (QW) formed from stacked submonolayers (SMLs) of InAs in GaAs is studied …
Excitonic localization in AlN-rich AlxGa1− xN/AlyGa1− yN multi-quantum-well grain boundaries
AlGaN/AlGaN multi-quantum-wells (MQW) with AlN-rich grains have been grown by metal
organic chemical vapor deposition. The grains are observed to have strong excitonic …
organic chemical vapor deposition. The grains are observed to have strong excitonic …
Enhancement of photoluminescence of GaAsBi quantum wells by parabolic design of AlGaAs barriers
S Pūkienė, M Karaliūnas, A Jasinskas… - …, 2019 - iopscience.iop.org
Influence of barrier material and structure on carrier quantum confinement in GaAsBi
quantum wells (QWs) is studied comprehensively. Single-and multi-QW structures were …
quantum wells (QWs) is studied comprehensively. Single-and multi-QW structures were …
Bandgap tuning of GaAs/GaAsSb core-shell nanowires grown by molecular beam epitaxy
Semiconductor nanowires have been identified as a viable technology for next-generation
infrared (IR) photodetectors with improved detectivity and detection across a range of …
infrared (IR) photodetectors with improved detectivity and detection across a range of …
Probing the Band Splitting near the Γ Point in the van der Waals Magnetic Semiconductor CrSBr
This study investigates the electronic band structure of chromium sulfur bromide (CrSBr)
through comprehensive photoluminescence (PL) characterization. We clearly identify low …
through comprehensive photoluminescence (PL) characterization. We clearly identify low …
Photoluminescence enhancement associated with the small size of GaN nanorods
M Almokhtar, NA All, JQM Almarashi, H Asahi - Journal of Alloys and …, 2022 - Elsevier
Abstract Small size GaN nanorods (GaN NRs) show new features of the photoluminescence
(PL) associated with the enhanced surface effects and the strong electron-phonon coupling …
(PL) associated with the enhanced surface effects and the strong electron-phonon coupling …
[HTML][HTML] Spatially indirect radiative recombination in InAlAsSb grown lattice-matched to InP by molecular beam epitaxy
A photoluminescence (PL) spectroscopy study of the bulk quaternary alloy InAlAsSb is
presented. Samples were grown lattice-matched to InP by molecular beam epitaxy and two …
presented. Samples were grown lattice-matched to InP by molecular beam epitaxy and two …
Temperature dependent “S-shaped” photoluminescence behavior of InGaN nanolayers: optoelectronic implications in harsh environment
Temperature-dependent photoluminescence measurements are reported for n+-and n-type
InGaN nanolayers grown by plasma-assisted molecular beam epitaxy (PAMBE) on AlN/n-Si …
InGaN nanolayers grown by plasma-assisted molecular beam epitaxy (PAMBE) on AlN/n-Si …
Effects of annealing on GaAs/GaAsSbN/GaAs core-multi-shell nanowires
The effects of ex-situ annealing in a N 2 ambient on the properties of GaAs/GaAsSbN/GaAs
core-multi-shell nanowires on Si (111) substrate grown by self-catalyzed molecular beam …
core-multi-shell nanowires on Si (111) substrate grown by self-catalyzed molecular beam …