Growth, dielectric properties, and memory device applications of ZrO2 thin films
D Panda, TY Tseng - Thin Solid Films, 2013 - Elsevier
In the advancement of complementary metal-oxide-semiconductor device technology, SiO2
was used as an outstanding dielectric and has dominated the microelectronics industry for …
was used as an outstanding dielectric and has dominated the microelectronics industry for …
Research progress of high dielectric constant zirconia-based materials for gate dielectric application
J Xie, Z Zhu, H Tao, S Zhou, Z Liang, Z Li, R Yao… - Coatings, 2020 - mdpi.com
The high dielectric constant ZrO2, as one of the most promising gate dielectric materials for
next generation semiconductor device, is expected to be introduced as a new high k …
next generation semiconductor device, is expected to be introduced as a new high k …
An overview of conventional and new advancements in high kappa thin film deposition techniques in metal oxide semiconductor devices
P Devaray, SFWM Hatta, YH Wong - Journal of Materials Science …, 2022 - Springer
In the last three decades, study has seen the evolution of metal oxide semiconductor (MOS)
devices as device geometries have shrunk in line with Moore's law. This device shrunk …
devices as device geometries have shrunk in line with Moore's law. This device shrunk …
The effect of nanometre-scale kinetic competition on the phase selection in Zr/Si superstructure
G Cao, M Guo, F Yang, H Xu, G Shao, J Hu - Materials Characterization, 2024 - Elsevier
Nano structured coating system demonstrates outstanding performance stemming from
unique structure evolution. Zr/Si coating was proposed as an ideal candidate for the …
unique structure evolution. Zr/Si coating was proposed as an ideal candidate for the …
Modifications of structural, chemical, and electrical characteristics of Er2O3/Si interface under Co-60 gamma irradiation
This paper reports the influences of gamma radiation on the structural, electrical, and
chemical characteristics of erbium oxide (Er 2 O 3) thin films and the possible mechanisms …
chemical characteristics of erbium oxide (Er 2 O 3) thin films and the possible mechanisms …
Lanthanide rare earth oxide thin film as an alternative gate oxide
An ultrathin gate oxide is needed for future nanoscale technology due to the density of
integrated circuits will increase exponentially every two to three years as predicted by …
integrated circuits will increase exponentially every two to three years as predicted by …
Sm2O3 gate dielectric on Si substrate
High dielectric constant (κ) materials have become a necessity for down scaling of metal-
oxide-semiconductor (MOS) based devices. Rare-earth oxides have been studied as …
oxide-semiconductor (MOS) based devices. Rare-earth oxides have been studied as …
Frequency dependent gamma-ray irradiation response of Sm2O3 MOS capacitors
The frequency dependent irradiation influences on Sm 2 O 3 MOS capacitors have been
investigated and possible use of Sm 2 O 3 in MOS-based radiation sensor was discussed in …
investigated and possible use of Sm 2 O 3 in MOS-based radiation sensor was discussed in …
Solution processed zirconium oxide dielectric thin films for electronic applications
Zirconium oxide is a promising dielectric material for electronic applications due to favorable
properties such as large band gap and high dielectric constant. It is compatible with solution …
properties such as large band gap and high dielectric constant. It is compatible with solution …
First principles study of structural and electronic properties of cubic phase of ZrO2 and HfO2
YL Yang, XL Fan, C Liu, RX Ran - Physica B: Condensed Matter, 2014 - Elsevier
We perform first-principles calculations founded on the hybrid density functional theory to
investigate the electronic structure properties of c-ZrO 2 and c-HfO 2. The results indicate …
investigate the electronic structure properties of c-ZrO 2 and c-HfO 2. The results indicate …