Silicon carbide has recently surged as an alternative material for scalable and integrated
quantum photonics, as it is a host for naturally occurring color centers within its bandgap …

This paper summarizes key findings in single-photon generation from deep level defects in
silicon carbide (SiC) and highlights the significance of these individually addressable …

Hexagonal boron nitride (hBN) is an emerging two-dimensional material for quantum
photonics owing to its large bandgap and hyperbolic properties. Here we report two …

In the last two decades, bulk, homoepitaxial, and heteroepitaxial growth of silicon carbide
(SiC) has witnessed many advances, giving rise to electronic devices widely used in high …

To date, quantum sources in the ultraviolet (UV) spectral region have been obtained only in
semiconductor quantum dots. Color centers in wide bandgap materials may represent a …

Vacancy-related centres in silicon carbide are attracting growing attention because of their
appealing optical and spin properties. These atomic-scale defects can be created using …

Electrically driven single-photon emitting devices have immediate applications in quantum
cryptography, quantum computation and single-photon metrology. Mature device fabrication …

Single-photon emitters (SPEs) play an important role in a number of quantum information
tasks such as quantum key distributions. In these protocols, telecom wavelength photons are …

We uncover the fine structure of a silicon vacancy in isotopically purified silicon carbide (4H-
SiC 28) and reveal not yet considered terms in the spin Hamiltonian, originated from the …

The search for an ideal single-photon source (SPS) with superior emission properties is still
at the core of many research efforts in optical quantum technologies and the criteria …