The gradually dwindling resources of fossil fuels and the urgency to reduce greenhouse gas
emissions portray a globally concerning image of our contemporary energy infrastructure …

Group-III nitride nanowire structures, including GaN, InN, AlN and their alloys, have been
intensively studied in the past decade. Unique to this material system is that its energy …

Renewable fuel generation is essential for a low carbon footprint economy. Thus, over the
last five decades, a significant effort has been dedicated towards increasing the …

Defect tolerance is the tendency of a semiconductor to keep its properties despite the
presence of crystallographic defects. Scientific understanding of the origin of defect …

Wide-band-gap GaN and Ga-rich InGaN alloys, with energy gaps covering the blue and
near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant …

Recently, various lanthanide ions (Ln3+) have been successfully doped into perovskite
quantum dots (PQDs), and the quantum-cutting emission of 2F5/2–2F7/2 for Yb3+ with a …

The III nitrides have been intensely studied in recent years because of their huge potential
for everything from high-efficiency solid-state lighting and photovoltaics to high-power and …

Nitride semiconductors are a promising class of materials for solar energy conversion
applications, such as photovoltaic and photoelectrochemical cells. Nitrides can have better …

Despite an extensive research effort for over 60 years, an understanding of the origins of
conductivity in wide band gap transparent conducting oxide (TCO) semiconductors remains …

We report on III-nitride photovoltaic cells with external quantum efficiency as high as 63%. In
x Ga 1− x N/GaN pin double heterojunction solar cells are grown by metal-organic chemical …