The band-anticrossing (BAC) model has been widely applied to analyse the electronic
structure of dilute nitride III-VN alloys such as GaN x As 1− x. The BAC model describes the …

Highly mismatched semiconductor alloys such as GaN x As 1− x and GaBi x As 1− x have
several novel electronic properties, including a rapid reduction in energy gap with …

Bismuth-containing III-V alloys open-up a range of possibilities for practical applications in
semiconductor lasers, photovoltaics, spintronics, photodiodes, and thermoelectrics. Of …

Abstract Electrically pumped GaAsBi/GaAs quantum well lasers are a promising new class
of near-infrared devices where, by use of the unusual band structure properties of GaAsBi …

Higher speed short-wavelength (850 nm) VCSELs are required for future high-capacity,
short-reach data communication links. The modulation bandwidth of such devices is …

Using an sp 3 s* tight-binding (TB) model we demonstrate how the observed strong bowing
of the band gap and spin-orbit-splitting with increasing Bi composition in the dilute bismide …

Formation of an intermediate band in GaN x P 0.4 As 0.6− x alloys due to the isovalent
doping by nitrogen is studied by photoreflectance and absorption spectroscopy. The …

We derive an analytical model to describe the conduction-band states of GaNAs-based
quantum well structures, including the band anticrossing effect between N resonant states …

We present a parallel implementation of the multi-bank k· p code () for calculation of the
electronic structure and optical properties of zinc blend structure semiconductor quantum …

The electronic band structure and material gain have been calculated for GaAsBi/GaAs
quantum wells (QWs) with various bismuth concentrations (Bi≤ 15%) within the 8-band and …