Physical Mechanisms behind the Field‐Cycling Behavior of HfO2‐Based Ferroelectric Capacitors
M Pešić, FPG Fengler, L Larcher… - Advanced Functional …, 2016 - Wiley Online Library
Novel hafnium oxide (HfO2)‐based ferroelectrics reveal full scalability and complementary
metal oxide semiconductor integratability compared to perovskite‐based ferroelectrics that …
metal oxide semiconductor integratability compared to perovskite‐based ferroelectrics that …
Microscopic Modeling of HfOx RRAM Operations: From Forming to Switching
A Padovani, L Larcher, O Pirrotta… - … on electron devices, 2015 - ieeexplore.ieee.org
We propose a model describing the operations of hafnium oxide-based resistive random
access memory (RRAM) devices at the microscopic level. Charge carrier and ion transport …
access memory (RRAM) devices at the microscopic level. Charge carrier and ion transport …
Resistive random access memory for future information processing system
Resistive random access memory (RRAM) is regarded as one of the most promising
emerging memory technologies for next-generation embedded, standalone nonvolatile …
emerging memory technologies for next-generation embedded, standalone nonvolatile …
Physics-based modeling approaches of resistive switching devices for memory and in-memory computing applications
The semiconductor industry is currently challenged by the emergence of Internet of Things,
Big data, and deep-learning techniques to enable object recognition and inference in …
Big data, and deep-learning techniques to enable object recognition and inference in …
True random number generator integration in a resistive RAM memory array using input current limitation
A novel True Random Number Generator circuit fabricated in a 130 nm HfO 2-based
resistive RAM process is presented. The generation of the random bit stream is based on a …
resistive RAM process is presented. The generation of the random bit stream is based on a …
Resistive Switching and Synaptic Behaviors of TaN/Al2O3/ZnO/ITO Flexible Devices With Embedded Ag Nanoparticles
This letter investigates the switching behavior of TaN/Al 2 O 3: Ag: ZnO/ITO memristors
fabricated on flexible substrates, for flexible nonvolatile memory and neuromorphic …
fabricated on flexible substrates, for flexible nonvolatile memory and neuromorphic …
Self-selective resistive device with hybrid switching mode for passive crossbar memory application
In this letter, we experimentally demonstrated a novel resistive device with a hybrid
switching mode that can be alternated between volatile threshold switching and non-volatile …
switching mode that can be alternated between volatile threshold switching and non-volatile …
A Compact Model of Program Window in HfOx RRAM Devices for Conductive Filament Characteristics Analysis
L Larcher, FM Puglisi, P Pavan… - … on Electron Devices, 2014 - ieeexplore.ieee.org
This paper presents a physics-based compact model for the program window in HfOx
resistive random access memory devices, defined as the ratio of the resistances in high …
resistive random access memory devices, defined as the ratio of the resistances in high …
A computational study of hafnia-based ferroelectric memories: From ab initio via physical modeling to circuit models of ferroelectric device
The discovery of ferroelectric properties of binary oxides revitalized the interest in
ferroelectrics and bridged the scaling gap between the state-of-the-art semiconductor …
ferroelectrics and bridged the scaling gap between the state-of-the-art semiconductor …
Charge Transport and Degradation in HfO2 and HfOx Dielectrics
A Padovani, L Larcher, G Bersuker… - IEEE electron device …, 2013 - ieeexplore.ieee.org
We combine experiments and simulations to investigate leakage current and breakdown
(BD) in stoichiometric and sub-stoichiometric hafnium oxides. Using charge-transport …
(BD) in stoichiometric and sub-stoichiometric hafnium oxides. Using charge-transport …