This article presents a review of physical, analytical, and compact models for oxide‐based
RRAM devices. An analysis of how the electrical, physical, and thermal parameters affect …

This paper presents an enhanced analytical model for bipolar resistive switching in
Pt/Ta2O5/TaOx/Pt Resistive Random-Access Memory (RRAM) devices. The conduction …

This article proposes a Configurable Memristive Logic Block (CMLB) that comprises of novel
memristive logic cells. The memristive logic cells are constructed from memristive D flip-flop …

An electrical model of a multi-level Ta 2 O 5/TaO x resistive random-access memory
(ReRAM) has been presented. The model is based on tunnelling current which is the …

The memristor, known as “the fourth fundamental passive circuit element”, was predicted
theoretically in 1971 by Prof. Leon Chua. It has attracted the scientist's attention since the …

This paper presents an analytical model for multi-filamentary resistive switching of a bipolar
Ta2O5/TaOx bi-layered resistive random-access memory (RRAM) based on tunnelling …

Memory structures can be found in most electronic devices ranging from field programmable
gate arrays to smart devices. There is an increasing demand for these devices to be energy …

In this work, a novel memristive SRAM cell is designed using seven transistors and one
memristor (7T1M). In this 7T1M SRAM cell, the non-volatile functionality is achieved by …

This work presents the circuit level design of a non-volatile D-latch (NVDL) using memristor
that retains the stored data in the event of power interruption. The programming complexity …

The fourth basic circuit element, known as the memristor, renowned for its small size, and
ability to store and retain information as resistance, allowing for implementation for logic …