Sixty-five years have passed since Burton, Cabrera and Frank (BCF) published the seminal
paper (WK Burton, N. Cabrera and FC Frank, Phil. Trans. Royal Soc. London, 243 (1951) …

For the solution growth of silicon carbide, solvent inclusions are significant technological
issues, and methods to suppress the formation of solvent inclusions are investigated in this …

While biological crystallization processes have been studied on the microscale extensively,
there is a general lack of models addressing the mesoscale aspects of such phenomena. In …

In the solution growth method of silicon carbide, cellular structures and solvent inclusions
are fatal defects. This study investigates the mechanism of how cosolvent chromium and …

Growth behaviors of GaN on patterned GaN substrate were studied herein. Spiral and
nucleation growth were observed after miscut-induced atomic steps disappeared. The …

This paper investigated the growth of spinel crystals in vanadium slag under different heat
treatment conditions. The growth mechanism was clarified by SEM+ EDS and statistical …

We demonstrated numerical simulations of impurity-induced crystal growth hysteresis in
spiral growth. The numerical scheme combines two different methods: the phase-field …

The step pinning hypothesis is widely accepted as an explanation for the inhabitation of
crystal growth by impurity molecules. This hypothesis enables us to evaluate the average …

This paper presents recent advances in the theory of multicomponent crystal growth from
gas or solution, focusing on the most common step-flow mechanisms: Burton-Cabrera …

We propose a simple formulation of the phase-field model for a stoichiometric compound
growing in a binary liquid. In previous models, chemical free energies of stoichiometric …