Advancement and challenges in MOSFET scaling

RK Ratnesh, A Goel, G Kaushik, H Garg… - Materials Science in …, 2021 - Elsevier
In this study, we enlighten about the field effect transistors (FET) and their technologies. As
far as very large integration is concerned, researchers are continuously focusing on scaling …

25th anniversary article: semiconductor nanowires–synthesis, characterization, and applications

NP Dasgupta, J Sun, C Liu, S Brittman… - Advanced …, 2014 - Wiley Online Library
Semiconductor nanowires (NWs) have been studied extensively for over two decades for
their novel electronic, photonic, thermal, electrochemical and mechanical properties. This …

A review of the electrical properties of semiconductor nanowires: insights gained from terahertz conductivity spectroscopy

HJ Joyce, JL Boland, CL Davies, SA Baig… - Semiconductor …, 2016 - iopscience.iop.org
Accurately measuring and controlling the electrical properties of semiconductor nanowires is
of paramount importance in the development of novel nanowire-based devices. In light of …

Silicon nanowires: a review on aspects of their growth and their electrical properties

V Schmidt, JV Wittemann, S Senz… - Advanced …, 2009 - Wiley Online Library
This paper summarizes some of the essential aspects of silicon‐nanowire growth and of
their electrical properties. In the first part, a brief description of the different growth …

Growth, thermodynamics, and electrical properties of silicon nanowires

V Schmidt, JV Wittemann, U Gosele - Chemical reviews, 2010 - ACS Publications
Research on silicon nanowires has developed rapidly in recent years. This can best be
inferred from the sharply increasing number of publications in this field. In 2008, more than …

Ohm's law survives to the atomic scale

B Weber, S Mahapatra, H Ryu, S Lee, A Fuhrer… - Science, 2012 - science.org
Wiring Up Silicon Surfaces One of the challenges in downsizing electronic circuits is
maintaining low resistivity of wires, because shrinking their diameter to near atomic …

GaAs nanopillar-array solar cells employing in situ surface passivation

G Mariani, AC Scofield, CH Hung… - Nature communications, 2013 - nature.com
Arrays of III–V direct-bandgap semiconductor nanopillars represent promising photovoltaic
candidates due to their inherent high optical absorption coefficients and minimized reflection …

Colloquium: Structural, electronic, and transport properties of silicon nanowires

R Rurali - Reviews of Modern Physics, 2010 - APS
In this Colloquium the theory of silicon nanowires is reviewed. Nanowires with diameters
below 10 nm are the focus, where quantum effects become important and the properties …

Classification with a disordered dopant-atom network in silicon

T Chen, J van Gelder, B van de Ven, SV Amitonov… - Nature, 2020 - nature.com
Classification is an important task at which both biological and artificial neural networks
excel,. In machine learning, nonlinear projection into a high-dimensional feature space can …

Single-donor ionization energies in a nanoscale CMOS channel

M Pierre, R Wacquez, X Jehl, M Sanquer… - Nature …, 2010 - nature.com
One consequence of the continued downward scaling of transistors is the reliance on only a
few discrete atoms to dope the channel, and random fluctuations in the number of these …