Optical Characterization of InGaN Quantum Structures at the Nanoscale
This review paper presents an overview of the optical characterization techniques for Indium
Gallium Nitride (InGaN) quantum well (QW) structures at a nanoscale. The two major …
Gallium Nitride (InGaN) quantum well (QW) structures at a nanoscale. The two major …
Recent progress in group Ⅲ-nitride Micro-LED displays: From material improvement methods, device optimization techniques to full-color realization strategies
J Shi, Y Chen, G Miao, H Jiang, H Song - Materials Science in …, 2025 - Elsevier
As a typical candidate in the field of next-generation optoelectronic display, micro-light-
emitting diodes (Micro-LEDs) have drawn a great deal of attention for their unrivalled …
emitting diodes (Micro-LEDs) have drawn a great deal of attention for their unrivalled …
[HTML][HTML] Carrier diffusion in long wavelength InGaN quantum well LEDs after injection through V-defects
The efficiency of operation of GaN-based light emitting diodes (LEDs) to a large degree
relies on realization of a uniform hole distribution between multiple quantum wells (QWs) of …
relies on realization of a uniform hole distribution between multiple quantum wells (QWs) of …
[HTML][HTML] Experimental evidence of hole injection through V-defects in long wavelength GaN-based LEDs
Hole injection through V-defect sidewalls into all quantum wells (QWs) of long wavelength
GaN light emitting diodes had previously been proposed as means to increase efficiency of …
GaN light emitting diodes had previously been proposed as means to increase efficiency of …
[HTML][HTML] High internal quantum efficiency of long wavelength InGaN quantum wells
Time-resolved and quasi-cw photoluminescence (PL) spectroscopy was applied to measure
the internal quantum efficiency (IQE) of c-plane InGaN single quantum wells (QWs) grown …
the internal quantum efficiency (IQE) of c-plane InGaN single quantum wells (QWs) grown …
[HTML][HTML] Properties of V-defect injectors in long wavelength GaN LEDs studied by near-field electro-and photoluminescence
The efficiency of multiple quantum well (QW) light emitting diodes (LEDs) to a large degree
depends on uniformity of hole distribution between the QWs. Typically, transport between …
depends on uniformity of hole distribution between the QWs. Typically, transport between …
Proposal and realization of V-groove color tunable µLEDs
M Hartensveld - Optics Express, 2022 - opg.optica.org
Color tunable micro light emitting diodes (µLEDs) are proposed and realized, making use of
V-grooves to vary the Indium content during growth. The V-grooves make use of semi-polar …
V-grooves to vary the Indium content during growth. The V-grooves make use of semi-polar …
Effect of varying threading dislocation densities on the optical properties of InGaN/GaN quantum wells with intentionally created V-shaped pits
The effect of varying threading dislocation densities on the internal quantum efficiencies
(IQEs) of InGaN quantum wells (QWs), with and without intentionally created “V-pits,” is …
(IQEs) of InGaN quantum wells (QWs), with and without intentionally created “V-pits,” is …
Evaluation of radiative and nonradiative recombination lifetimes in c-plane InGaN quantum wells with emission colors ranging from blue to red
K Mori-Tamamura, Y Morimoto… - Japanese Journal of …, 2023 - iopscience.iop.org
In this study, we investigate In composition and the carrier density dependences of radiative
and nonradiative recombination lifetimes for a series of c-plane InGaN quantum well (QW) …
and nonradiative recombination lifetimes for a series of c-plane InGaN quantum well (QW) …
Localized-state ensemble model analysis of InGaN/GaN quantum well structures with different dislocation densities
DS Arteev, AV Sakharov, EE Zavarin… - Semiconductor …, 2021 - iopscience.iop.org
The influence of dislocations on luminescence of InGaN/GaN multiple quantum wells was
investigated by temperature-dependent and time-resolved room-temperature …
investigated by temperature-dependent and time-resolved room-temperature …