Memory-based physical unclonable functions (mPUFs) are widely accepted as highly
secure because of the unclonable and immutable nature of manufacturer process variations …

Many commercially available memory chips are fabricated worldwide in untrusted facilities.
Therefore, a counterfeit memory chip can easily enter into the supply chain in different …

6T and 8T SRAM cells have been compared on 180nm technology using an industry-
standard Cadence Virtuoso Tool. It's challenging to make an SRAM cell with low power …

In this paper deals with simulation of FINFET device and subsequent application to a design
of 6 Transistor Static RAM cell with FINFET as well as analysis of design issues and …

Researchers working with electrical devices face the challenge of developing products that
have higher functionality while consuming a smaller amount of energy. The widespread use …

Researchers working with electronic devices face the challenge of making devices with
greater performance but lower power consumption. Immense usage of electronic products is …

For good memory design we need to explore the stability of the circuit in read and write
modes and parallely keep track of better read and write delays. The main significance of this …

This paper presents Gated Vdd and MTCMOS techniques to achieve low power from the
simulated static random-access memory (SRAM) cells. These techniques are implemented …

7T and 9T SRAM cells are compared by the software Cadence Virtuoso tool using 180nm
technology. Designing a memory of low power consumption is a challenging concept in the …

Abstract In this paper, Gated Vdd and MTCMOS techniques are proposed to get low power
from the simulated SRAM cells considering 4T, 5T and 6T circuits based on CMOS logic. In …