The large amount of light emitted from a light emitting diode (LED) being trapped inside the
semiconductor structure is the consequence of the large value of the refractive index. The …

We describe a detailed theoretical investigation of two-photon absorption photoconductivity
in semiconductor microcavities. We show that high enhancement (by a factor of> 10, 000) of …

A resonant-cavity-enhanced (RCE) PIN photodetector has high bandwidth and high
sensitivity compared with traditional PIN photodetectors. In this paper, the structure of a RCE …

Two novel top mirror designs of high contrast gratings (HCG) are used as the top mirrors of
the resonant-cavity enhanced photodetector (RCE PD) operating at 940 nm. The bottom …

A novel bonding method using silicate gel as the bonding medium was developed to
fabricate an InGaAs narrow-band response resonant cavity enhanced photodetector on a …

Este trabalho apresenta o desenvolvimento de dispositivos semicondutores utilizando
óxidos de zinco e estanho. O primeiro dispositivo semicondutor estudado está relacionado …

The dependence of the photocurrent, in a planar metal-semiconductor-metal photodetectors
(MSM), on active layer thickness and incident optical power is investigated using a two …

Technology in 21 century has developed in an accelerated rate. As a technology indicator of
modern era, computer has developed from its early age to ubiquitous equipment in every …

A two-dimensional simulation program, based on the drift-diffusion model, is developed. The
program numerically solves the basic semiconductor equations. The model is applied to …

We provide a detailed theoretical investigation of two-photon absorption photoconductivity in
semiconductor microcavities. We show that a high enhancement of the non-linear response …