GaN growth on Si is very attractive for low‐cost optoelectronics and high‐frequency, high‐
power electronics. It also opens a route towards an integration with Si electronics. Early …

Gallium nitride (GaN) is an extremely promising wide band gap semiconductor material for
optoelectronics and high temperature, high power electronics. Actually, GaN is probably the …

The grooved-plane sapphire substrates were first systematically investigated by wet
chemical etching, with and a mixture as the etchants. The structural and morphological …

One dimensional electronic materials are expected to be key components owing to their
potential applications in nanoscale electronics, optics, energy storage, and biology. Besides …

We demonstrated air-bridged lateral growth of an Al 0.98 Ga 0.02 N layer with significant
dislocation reduction by introduction of a porous AlN buffer underneath via metalorganic …

Fully coalesced epitaxial laterally overgrown a-plane GaN films were characterized for their
structural and optical quality. The films had a very smooth surface with a root mean square …

Stress states in GaN epilayers grown on Si (1 1 1) and c-plane sapphire, and their effects on
built-in piezoelectric field induced by compressive stress in InGaN/GaN multi-quantum well …

We have demonstrated maskless lateral epitaxial overgrowth of Al 0.96 Ga 0.04 N on
sapphire for dislocation reduction. 600 nm and 1 μm thick AlN layers were grown on …

A 40-fold reduction in density of vertical threading dislocations (VTDs) at the surface of GaN
is obtained with cantilever epitaxy by using narrow (< 1 μ m) mesas etched into a sapphire …

Light extraction of GaN-based light-emitting diodes grown on Si (111) substrate (GaN-on-Si
based LEDs) is presented in this study. Three different designs of GaN-on-Si based LEDs …