Novel approach toward plasma enhancement in trench-insulated gate bipolar transistors
M Antoniou, N Lophitis, F Bauer, I Nistor… - IEEE Electron …, 2015 - ieeexplore.ieee.org
In this letter, a trench-insulated gate bipolar transistor (IGBT) design with local charge
compensating layers featured at the cathode of the device is presented and analyzed. The …
compensating layers featured at the cathode of the device is presented and analyzed. The …
Gate structure design of SiC trench IGBTs for injection-enhancement effect
The trench gate structure is widely employed in silicon IGBTs because of the injection-
enhancement effect (IE-effect) that reduces the conduction loss. However, the conventional …
enhancement effect (IE-effect) that reduces the conduction loss. However, the conventional …
A novel diode-clamped CSTBT with ultra-low on-state voltage and saturation current
P Li, M Kong, X Chen - 2016 28th International Symposium on …, 2016 - ieeexplore.ieee.org
A novel diode-clamped carrier stored trench bipolar transistor (CSTBT) with improved
performances is proposed. The improvement has been achieved by introducing a P-layer …
performances is proposed. The improvement has been achieved by introducing a P-layer …
Experimental demonstration of the p-ring FS+ Trench IGBT concept: A new design for minimizing the conduction losses
M Antoniou, N Lophitis, F Udrea… - 2015 IEEE 27th …, 2015 - ieeexplore.ieee.org
A new IGBT type structure, namely the p-ring FS+ Trench IGBT, with improved performance
has been demonstrated. The improvement has been achieved through the utilization of p …
has been demonstrated. The improvement has been achieved through the utilization of p …
Simulation study of a low on-state voltage and saturation current TCIGBT with diodes
J Huang, H Huang, X Chen - IEEE Transactions on Electron …, 2019 - ieeexplore.ieee.org
In this brief, a novel trench clustered insulated gate bipolar transistor (TCIGBT) is proposed
and investigated by the simulation. In comparison with the conventional TCIGBT, the p-well …
and investigated by the simulation. In comparison with the conventional TCIGBT, the p-well …
An injection enhanced LIGBT on thin SOI layer compatible with CMOS process
G Deng, X Luo, T Sun, Z Zhao, D Fan… - IEEE Transactions on …, 2019 - ieeexplore.ieee.org
In this paper, we present a lateral injection enhanced insulated gate bipolar transistor
(LIEGT) and investigate its mechanism. The LIEGT features a recessed trench at the cathode …
(LIEGT) and investigate its mechanism. The LIEGT features a recessed trench at the cathode …
Experimental Demonstration of Point-Injection Trench IGBT Concept
The point injection trench IGBT is a promising concept based on the narrowing of the mesa
between active gate trenches. In this paper, multiple design variations of the point injection …
between active gate trenches. In this paper, multiple design variations of the point injection …
Plasma Enhancement Semi-Superjunction Trench IGBT with Higher Figure-of-Merit
An improved semi-superjunction insulated gate bipolar transistor (IGBT) is presented. The
carrier injection efficiency is enhanced by using a plasma enhancement layer in the device …
carrier injection efficiency is enhanced by using a plasma enhancement layer in the device …
An injection enhanced LIGBT on thin SOI layer with low ON-state voltage
G Deng, X Luo, D Fan, T Sun… - 2019 31st International …, 2019 - ieeexplore.ieee.org
A Lateral Injection Enhanced Insulated Gate Bipolar Transistor (LIEGT) on thin SOI layer is
proposed and investigated by simulations. The LIEGT features a recessed trench at cathode …
proposed and investigated by simulations. The LIEGT features a recessed trench at cathode …
Compact modeling of advanced Si-IGBT for circuit design
T Yamamoto, Y Fukunaga, D Ikoma… - … on Devices, Circuits …, 2018 - ieeexplore.ieee.org
A physics-based compact model of insulated-gate bipolar transistors (IGBTs) models is
presented. The IGBT structure consisting of a MOSFET and a bipolar parts, has been …
presented. The IGBT structure consisting of a MOSFET and a bipolar parts, has been …