Rapid advancement of wide-bandgap AlGaN semiconductor materials offers tremendous
opportunities in the field of ultraviolet (UV) optoelectronics for a wide range of advanced …

AlGaN-based materials have exhibited considerable potential for fabricating ultraviolet (UV)
light-emitting diodes (LEDs) owing to their direct, wide, and adjustable energy bandgap …

The energy-efficient deep ultraviolet (DUV) optoelectronic devices suffer from critical issues
associated with the poor quality and large strain of nitride material system caused by the …

Interface engineering in heterostructures at the atomic scale has been a central research
focus of nanoscale and quantum material science. Despite its paramount importance, the …

Progress in the design and fabrication of ultraviolet and deep-ultraviolet group III–nitride
optoelectronic devices, based on aluminum gallium nitride and boron nitride and their …

Internal polarizations, caused by the intrinsic material properties and lattice mismatch during
material epitaxial growth, exist inherently in III-nitrides and limit significantly their practical …

AlGaN and GaN sidewalls were turned into Al x Ga2–x O3 and Ga2O3, respectively, by
thermal oxidation to improve the optoelectrical characteristics of deep ultraviolet (DUV) light …

The non-polar a-plane AlGaN epitaxial layer with an Al composition as high as 0.69 and
enhanced structural and optical properties was successfully grown by metal-organic …

Despite the continuous technological progress and recent commercialization of UV light
emitting diodes for sterilization and disinfection applications, the performance of solid-state …

We investigate temperature-dependent carrier transfer and efficiency droop on AlGaN-
based deep ultraviolet light-emitting diodes. The Shockley-Read-Hall (SRH) recombination …