Recent progress in deep-depletion diamond metal–oxide–semiconductor field-effect transistors
Diamond has been explored to develop prototype field-effect transistors (FETs). At present,
various architectures that are suited to high temperature and high-radiation environments …
various architectures that are suited to high temperature and high-radiation environments …
Recent progress in diamond-based MOSFETs
X Yuan, Y Zheng, X Zhu, J Liu, J Liu, C Li, P Jin… - International Journal of …, 2019 - Springer
Recent developments in the use of diamond materials as metal-oxide-semiconductor field-
effect transistors (MOSFETs) are introduced in this article, including an analysis of the …
effect transistors (MOSFETs) are introduced in this article, including an analysis of the …
MOSFETs on (110) C–H diamond: ALD Al₂O₃/diamond interface analysis and high performance normally-OFF operation realization
B Liu, T Bi, Y Fu, K Kudara, S Imanishi… - … on Electron Devices, 2022 - ieeexplore.ieee.org
Hole concentration of 2-D hole gas (2DHG) on (110) diamond is higher than that on other
faces, making it the best choice for power device application. Detailed analysis of atomic …
faces, making it the best choice for power device application. Detailed analysis of atomic …
[HTML][HTML] Energy distribution of Al2O3/diamond interface states characterized by high temperature capacitance-voltage method
X Zhang, T Matsumoto, U Sakurai, T Makino, M Ogura… - Carbon, 2020 - Elsevier
In our previous work, we demonstrated the world's first inversion-type p-channel diamond
metal–oxide–semiconductor field-effect transistor (MOSFET). However, it exhibited low …
metal–oxide–semiconductor field-effect transistor (MOSFET). However, it exhibited low …
Breakdown voltage enhancement of vertical diamond Schottky barrier diode with annealing method and AlO field plate structure
Q Li, J Wang, G Shao, G Chen, S He… - IEEE Electron …, 2022 - ieeexplore.ieee.org
We proposed a simple method to enhance the breakdown voltage (BV) and reduce the turn-
on voltage (VON) for diamond vertical Schottky barrier diode (SBD) with Al2O3 field plate …
on voltage (VON) for diamond vertical Schottky barrier diode (SBD) with Al2O3 field plate …
[HTML][HTML] Transport mechanism in O-terminated diamond/ZrO2 based MOSCAPs
Abstract Metal Oxide Semiconductor capacitors were fabricated using p-type O-terminated
(001) diamond and zirconium dioxide deposited by atomic layer deposition at low …
(001) diamond and zirconium dioxide deposited by atomic layer deposition at low …
Electrical Properties of Boron-Doped Diamond MOSFETs With Ozone as Oxygen Precursor for Al2O3 Deposition
Boron-doped diamond (B-diamond) MOS capacitors and MOSFETs are fabricated and
characterized. The Al2O3 gate insulator is deposited by an atomic layer deposition (ALD) …
characterized. The Al2O3 gate insulator is deposited by an atomic layer deposition (ALD) …
Atomic layer deposition of high-κ layers on polycrystalline diamond for MOS devices: a review
Changes in the expected performance of electronic devices have heavily influenced
investigation into Si-substitute materials having the ability to meet these demands. Two …
investigation into Si-substitute materials having the ability to meet these demands. Two …
175V, > 5.4 MV/cm, at 250°C Diamond MOSFET and its reverse conduction
A diamond MOSFET has been fabricated and characterized up to 250° C. The fabrication
process has been improved in order to significantly reduce the specific on resistance, down …
process has been improved in order to significantly reduce the specific on resistance, down …
Electrical property improvement for boron-doped diamond metal–oxide–semiconductor field-effect transistors
High-performance boron-doped diamond (B-diamond) metal–oxide–semiconductor field-
effect transistors (MOSFETs) are fabricated by improving fabrication process and device …
effect transistors (MOSFETs) are fabricated by improving fabrication process and device …