Microwave acoustic devices: Recent advances and outlook

S Gong, R Lu, Y Yang, L Gao… - IEEE Journal of …, 2021 - ieeexplore.ieee.org
This paper presents a short review of the microwave acoustics area, where exciting material
innovations and performance advancements have been made in the past decade. The ever …

Piezoelectric MEMS—Evolution from sensing technology to diversified applications in the 5G/Internet of Things (IoT) era

X Le, Q Shi, P Vachon, EJ Ng… - Journal of Micromechanics …, 2021 - iopscience.iop.org
The rapid development of the fifth-generation mobile networks (5G) and Internet of Things
(IoT) is inseparable from a large number of miniature, low-cost, and low-power sensors and …

Aluminum scandium nitride thin-film bulk acoustic resonators for 5G wideband applications

Y Zou, C Gao, J Zhou, Y Liu, Q Xu, Y Qu… - Microsystems & …, 2022 - nature.com
Bulk acoustic wave (BAW) filters have been extensively used in consumer products for
mobile communication systems due to their high performance and standard complementary …

A film bulk acoustic resonator based on ferroelectric aluminum scandium nitride films

J Wang, M Park, S Mertin, T Pensala… - Journal of …, 2020 - ieeexplore.ieee.org
This work reports on the first demonstration of the frequency tuning and intrinsic polarization
switching of film bulk acoustic resonators (FBARs), based on sputtered AlScN piezoelectric …

New-generation ferroelectric AlScN materials

Y Zhang, Q Zhu, B Tian, C Duan - Nano-Micro Letters, 2024 - Springer
Ferroelectrics have great potential in the field of nonvolatile memory due to programmable
polarization states by external electric field in nonvolatile manner. However, complementary …

Scandium-doped aluminum nitride for acoustic wave resonators, filters, and ferroelectric memory applications

L Chen, C Liu, M Li, W Song, W Wang… - ACS Applied …, 2022 - ACS Publications
Scandium-doped aluminum nitride (AlScN) has generated great research interest owing to
its unique properties. The wurtzite-structure AlScN is compatible with the complementary …

Ultrathin Al1−x Sc x N for Low‐Voltage‐Driven Ferroelectric‐Based Devices

G Schönweger, MR Islam, N Wolff… - physica status solidi …, 2023 - Wiley Online Library
Thickness scaling of ferroelectricity in Al1− x Sc x N is a determining factor for its potential
application in neuromorphic computing and memory devices. In this letter, ultrathin (10 nm) …

[HTML][HTML] Epitaxial ScxAl1− xN on GaN exhibits attractive high-K dielectric properties

J Casamento, H Lee, T Maeda, V Gund… - Applied Physics …, 2022 - pubs.aip.org
Epitaxial Sc x Al 1− x N thin films of∼ 100 nm thickness grown on metal polar GaN
substrates are found to exhibit significantly enhanced relative dielectric permittivity (ε r) …

Coexistence of in-and out-of-plane piezoelectricity in Janus XSSiN2 (X= Cr, Mo, W) monolayers

J Liao, X Ma, G Yuan, P Xu, Z Yuan - Applied Surface Science, 2023 - Elsevier
Recently, owing to the asymmetric structures, the 2D Janus piezoelectric materials have
attracted much attention. However, the piezoelectric property of Janus materials related to a …

Millimeter wave thin-film bulk acoustic resonator in sputtered scandium aluminum nitride

S Cho, O Barrera, P Simeoni… - Journal of …, 2023 - ieeexplore.ieee.org
This work reports a millimeter wave (mmWave) thin-film bulk acoustic resonator (FBAR) in
sputtered scandium aluminum nitride (ScAlN). This paper identifies challenges of frequency …