Microwave acoustic devices: Recent advances and outlook
This paper presents a short review of the microwave acoustics area, where exciting material
innovations and performance advancements have been made in the past decade. The ever …
innovations and performance advancements have been made in the past decade. The ever …
Piezoelectric MEMS—Evolution from sensing technology to diversified applications in the 5G/Internet of Things (IoT) era
The rapid development of the fifth-generation mobile networks (5G) and Internet of Things
(IoT) is inseparable from a large number of miniature, low-cost, and low-power sensors and …
(IoT) is inseparable from a large number of miniature, low-cost, and low-power sensors and …
Aluminum scandium nitride thin-film bulk acoustic resonators for 5G wideband applications
Bulk acoustic wave (BAW) filters have been extensively used in consumer products for
mobile communication systems due to their high performance and standard complementary …
mobile communication systems due to their high performance and standard complementary …
A film bulk acoustic resonator based on ferroelectric aluminum scandium nitride films
This work reports on the first demonstration of the frequency tuning and intrinsic polarization
switching of film bulk acoustic resonators (FBARs), based on sputtered AlScN piezoelectric …
switching of film bulk acoustic resonators (FBARs), based on sputtered AlScN piezoelectric …
New-generation ferroelectric AlScN materials
Ferroelectrics have great potential in the field of nonvolatile memory due to programmable
polarization states by external electric field in nonvolatile manner. However, complementary …
polarization states by external electric field in nonvolatile manner. However, complementary …
Scandium-doped aluminum nitride for acoustic wave resonators, filters, and ferroelectric memory applications
Scandium-doped aluminum nitride (AlScN) has generated great research interest owing to
its unique properties. The wurtzite-structure AlScN is compatible with the complementary …
its unique properties. The wurtzite-structure AlScN is compatible with the complementary …
Ultrathin Al1−x Sc x N for Low‐Voltage‐Driven Ferroelectric‐Based Devices
Thickness scaling of ferroelectricity in Al1− x Sc x N is a determining factor for its potential
application in neuromorphic computing and memory devices. In this letter, ultrathin (10 nm) …
application in neuromorphic computing and memory devices. In this letter, ultrathin (10 nm) …
[HTML][HTML] Epitaxial ScxAl1− xN on GaN exhibits attractive high-K dielectric properties
Epitaxial Sc x Al 1− x N thin films of∼ 100 nm thickness grown on metal polar GaN
substrates are found to exhibit significantly enhanced relative dielectric permittivity (ε r) …
substrates are found to exhibit significantly enhanced relative dielectric permittivity (ε r) …
Coexistence of in-and out-of-plane piezoelectricity in Janus XSSiN2 (X= Cr, Mo, W) monolayers
J Liao, X Ma, G Yuan, P Xu, Z Yuan - Applied Surface Science, 2023 - Elsevier
Recently, owing to the asymmetric structures, the 2D Janus piezoelectric materials have
attracted much attention. However, the piezoelectric property of Janus materials related to a …
attracted much attention. However, the piezoelectric property of Janus materials related to a …
Millimeter wave thin-film bulk acoustic resonator in sputtered scandium aluminum nitride
This work reports a millimeter wave (mmWave) thin-film bulk acoustic resonator (FBAR) in
sputtered scandium aluminum nitride (ScAlN). This paper identifies challenges of frequency …
sputtered scandium aluminum nitride (ScAlN). This paper identifies challenges of frequency …