ReRAM: History, status, and future
Y Chen - IEEE Transactions on Electron Devices, 2020 - ieeexplore.ieee.org
This article reviews the resistive random-access memory (ReRAM) technology initialization
back in the 1960s and its heavily focused research and development from the early 2000s …
back in the 1960s and its heavily focused research and development from the early 2000s …
Nanoionic memristive phenomena in metal oxides: the valence change mechanism
This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …
valence change mechanism (VCM), which has become a major trend in electronic materials …
Resistive switching memories based on metal oxides: mechanisms, reliability and scaling
D Ielmini - Semiconductor Science and Technology, 2016 - iopscience.iop.org
With the explosive growth of digital data in the era of the Internet of Things (IoT), fast and
scalable memory technologies are being researched for data storage and data-driven …
scalable memory technologies are being researched for data storage and data-driven …
Emerging memory technologies: Recent trends and prospects
This tutorial introduces the basics of emerging nonvolatile memory (NVM) technologies
including spin-transfer-torque magnetic random access memory (STTMRAM), phase …
including spin-transfer-torque magnetic random access memory (STTMRAM), phase …
Compact modeling of RRAM devices and its applications in 1T1R and 1S1R array design
In this paper, we present a compact model for metal-oxide-based resistive random access
memory (RRAM) devices with bipolar switching characteristics. The switching mechanism …
memory (RRAM) devices with bipolar switching characteristics. The switching mechanism …
Impact of non-ideal characteristics of resistive synaptic devices on implementing convolutional neural networks
Emerging non-volatile memory (eNVM) based resistive synaptic devices have shown great
potential for implementing deep neural networks (DNNs). However, the eNVM devices …
potential for implementing deep neural networks (DNNs). However, the eNVM devices …
Resistive crossbars as approximate hardware building blocks for machine learning: Opportunities and challenges
Traditional computing systems based on the von Neumann architecture are fundamentally
bottlenecked by data transfers between processors and memory. The emergence of data …
bottlenecked by data transfers between processors and memory. The emergence of data …
Phase-change and redox-based resistive switching memories
This paper addresses the two main resistive switching (RS) memory technologies: phase-
change memory (PCM) and redox-based resistive random access memory (ReRAM). It will …
change memory (PCM) and redox-based resistive random access memory (ReRAM). It will …
Imaging the three-dimensional conductive channel in filamentary-based oxide resistive switching memory
Filamentary-based oxide resistive memory is considered as a disruptive technology for
nonvolatile data storage and reconfigurable logic. Currently accepted models explain the …
nonvolatile data storage and reconfigurable logic. Currently accepted models explain the …
Ultra-low-energy three-dimensional oxide-based electronic synapses for implementation of robust high-accuracy neuromorphic computation systems
Neuromorphic computing is an attractive computation paradigm that complements the von
Neumann architecture. The salient features of neuromorphic computing are massive …
Neumann architecture. The salient features of neuromorphic computing are massive …